Vertical GaN Schottky barrier diode (SBD) structures were grown by metal-organic chemical
vapor deposition on free-standing GaN substrates. The carbon do** effect on SBD …

The progress in nitrides technology is widely believed to be limited and hampered by the
lack of high-quality gallium nitride wafers. Though various epitaxial techniques like epitaxial …

This work examines the changes in bonding of GaN nanowall network samples with varying
morphology grown by rf-plasma assisted molecular beam epitaxy system. X-ray …

The hydride vapor phase epitaxy (HVPE) grown GaN samples were etched by H3PO4,
mixed solution of H2SO4 and H3PO4 (HH) and molten eutectic of KOH–NaOH (E) …

Hexagonal GaN (0001) has been grown by a pseudo-HVPE method on β-Ga2O3 (100)
using an intermediate low-temperature buffer layer formed by in situ NH3 treatment of β …

After a brief review on the progresses in GaN substrates by ammonothermal method and Na-
flux method and hydride vapor phase epitaxy (HVPE) technology, our research results of …

A porous template has the function of relieving the stress of epitaxially grown GaN crystals
and blocking dislocations. In this study, a 2 inch self-standing porous GaN crystal film was …

We have studied growth and self-separation of bulk GaN on c-oriented Al2O3 using low
temperature (LT) GaN buffer layers. By studying the X-ray diffraction (XRD) signature for the …

The III-nitrides have attracted much attention because of their applicability in optoelectronic
devices, whose emission wavelengths range from green to ultraviolet light due to their wide …

The authors have studied the epitaxial growth and structural characterization of coalesced
GaN nanowire arrays formed directly on Si and SiO x substrates. It was observed that the …