Electronic and thermal properties of graphene and recent advances in graphene based electronics applications
Recently, graphene has been extensively researched in fundamental science and
engineering fields and has been developed for various electronic applications in emerging …
engineering fields and has been developed for various electronic applications in emerging …
The versatility of copper tin sulfide
In recent years, copper tin sulfide (CTS) chalcogenide compounds have witnessed
applicability in various fields, rendering them as a formidable candidate for various …
applicability in various fields, rendering them as a formidable candidate for various …
Electrically-pumped (Ga, In, Al) N vertical-cavity surface-emitting laser
(57) ABSTRACT A vertical-cavity surface-emitting laser (VCSEL) comprising a low-loss thin
metal contact and current spreading layer within the optical cavity that provides for improved …
metal contact and current spreading layer within the optical cavity that provides for improved …
Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices
A review is presented of the fabrication, operation, and applications of rare-earth-doped
GaN electroluminescent devices (ELDs). GaN: RE ELDs emit light due to impact excitation of …
GaN electroluminescent devices (ELDs). GaN: RE ELDs emit light due to impact excitation of …
Ohmic-contact technology for GaN-based light-emitting diodes: Role of p-type contact
JO Song, JS Ha, TY Seong - IEEE transactions on electron …, 2009 - ieeexplore.ieee.org
GaN-based semiconductors are of great technological importance for the fabrication of
optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes. The further …
optoelectronic devices, such as light-emitting diodes (LEDs) and laser diodes. The further …
Light extraction enhancement of AlGaN-based vertical type deep-ultraviolet light-emitting-diodes by using highly reflective ITO/Al electrode and surface roughening
YJ Sung, MS Kim, H Kim, S Choi, YH Kim, MH Jung… - Optics express, 2019 - opg.optica.org
AlGaN-based vertical type high power ultraviolet-C light emitting diodes (UV-C LEDs), which
have a Ga-face n-contact structure, were fabricated on a LED epilayer transferred to a carrier …
have a Ga-face n-contact structure, were fabricated on a LED epilayer transferred to a carrier …
Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction
A molecular beam epitaxy regrowth technique was demonstrated on standard industrial
patterned sapphire substrate light-emitting diode (LED) epitaxial wafers emitting at 455 nm …
patterned sapphire substrate light-emitting diode (LED) epitaxial wafers emitting at 455 nm …
InGaN/GaN light emitting diodes with Ni/Au, Ni/ITO and ITO p-type contacts
YC Lin, SJ Chang, YK Su, TY Tsai, CS Chang… - Solid-State …, 2003 - Elsevier
The optical and electrical properties of indium tin oxide (ITO)(60 nm), Ni (3.5 nm)/ITO (60
nm) and Ni (5 nm)/Au (5 nm) films were studied. It was found that the normalized …
nm) and Ni (5 nm)/Au (5 nm) films were studied. It was found that the normalized …
Ti3C2Tx MXene van der Waals Gate Contact for GaN High Electron Mobility Transistors
Gate controllability is a key factor that determines the performance of GaN high electron
mobility transistors (HEMTs). However, at the traditional metal‐GaN interface, direct …
mobility transistors (HEMTs). However, at the traditional metal‐GaN interface, direct …
High-power hybrid GaN-based green laser diodes with ITO cladding layer
L Hu, X Ren, J Liu, A Tian, L Jiang, S Huang… - Photonics …, 2020 - opg.optica.org
Green laser diodes (LDs) still perform worst among the visible and near-infrared spectrum
range, which is called the “green gap.” Poor performance of green LDs is mainly related to …
range, which is called the “green gap.” Poor performance of green LDs is mainly related to …