This review is focused on new concepts and recent progress in the development of three
major quantum dot (QD) based optoelectronic devices: photovoltaic cells, photodetectors …

The development of cost-effective and highly sensitive short-wave infrared (SWIR)
photodetectors is crucial for the expanding applications of SWIR imaging in civilian …

Transition metal dichalcogenides (TMDs) manifest excellent phonon-limited mobility and
strong light–matter interaction, which, however, conflict with the long response time and low …

Mercury Cadmium Telluride (MCT) is the premier active material used in infrared (IR)
detection technology. The most recent work related to the improvement of MCT-based …

Lead sulfide (PbS) quantum dots (QDs) exhibit outstanding size-dependent properties that
can be harnessed for optoelectronic applications. For example, they can be used for …

Colloidal quantum dots (CQDs) have emerged as promising materials for thin film
photodiodes (TFPDs) in the short-wavelength infrared detection range, offering an …

Establishing the color of incident light is essential for many applications, such as machine
vision, but generally requires either a dispersive component or multiple spectrally selective …

Thin films of lead sulfide alloyed with thorium and oxygen were deposited on GaAs
substrates and processed to produce a photo-diode structure. Structural, optical and …

Self‐powered dual‐functional detectors comprising ap‐Si/nanostructured Au/CdS
sandwiched structure, which respond to the visible and long‐wave infrared dual‐band, are …

There has been considerable interest in solution-processed semiconductors for use in near-
infrared (NIR) and short-wavelength infrared (SWIR) photodetectors. In this regard …