Silicon electrodeposition for microelectronics and distributed energy: A mini-review
A Suzdaltsev - Electrochem, 2022 - mdpi.com
Due to its prevalence in nature and its particular properties, silicon is one of the most
popular materials in various industries. Currently, metallurgical silicon is obtained by …
popular materials in various industries. Currently, metallurgical silicon is obtained by …
Germanium electrodeposition into porous silicon for silicon-germanium alloying
A method of germanium electrodeposition from a GeO 2-based aqueous solution into the
pore channels of anodic mesoporous silicon formed on n-type highly-doped (100) silicon …
pore channels of anodic mesoporous silicon formed on n-type highly-doped (100) silicon …
Composition-adjustable silicon-germanium alloy films based on porous silicon matrices
Morphology and crystalline structure of silicon-germanium alloys formed by rapid thermal
processing of germanium-filled porous silicon layers are evaluated. Two types of porous …
processing of germanium-filled porous silicon layers are evaluated. Two types of porous …
Thermoelectric materials based on cobalt-containing sintered silicon-germanium alloys
Thermoelectric materials based on cobalt-containing SiGe alloy films were fabricated using
monocrystalline silicon wafers with thin porous silicon layers electrochemically decorated …
monocrystalline silicon wafers with thin porous silicon layers electrochemically decorated …
Structure and Thermal Conductivity of Thin Films of the Si Ge Alloy Formed by Electrochemical Deposition of Germanium into Porous Silicon
DL Goroshko, IM Gavrilin, AA Dronov… - … and Data Processing, 2023 - Springer
Continuous and porous films of Si Ge alloys with a germanium content of about 40 and a
thickness of 3–4 m formed on single-crystal silicon by electrochemical deposition into the …
thickness of 3–4 m formed on single-crystal silicon by electrochemical deposition into the …
Electrical Transport in Porous Structures of Si-Ge/c-Si Formed by the Electrochemical Deposition of Germanium in Porous Silicon
DL Goroshko, IM Gavrilin, AA Dronov, OA Goroshko… - Semiconductors, 2023 - Springer
Film structures based on Si1–x Ge x (0< x< 1) solid solutions are currently obtained by
chemical-vapor-deposition methods. For device application of the obtained structures, it is …
chemical-vapor-deposition methods. For device application of the obtained structures, it is …
Crystallinity of Silicon-Germanium Alloy Films Based on Porous Silicon and Silicon Nanowires
Morphology and crystalline structure of silicon-germanium alloys formed by rapid thermal
processing of germanium-filled porous silicon layers are evaluated. Two types of porous …
processing of germanium-filled porous silicon layers are evaluated. Two types of porous …
Перспективные оптические и электронные межсоединения элементов интегральных микросхем
СК Лазарук, ВП Бондаренко, ВЕ Борисенко… - Доклады …, 2024 - doklady.bsuir.by
Аннотация Обобщены результаты научных исследований, выполненных в научных
подразделениях кафедры микро-и наноэлектроники Белорусского государственного …
подразделениях кафедры микро-и наноэлектроники Белорусского государственного …
Формирование слоев пористого кремния для создания гетероэпитаксиальных и композитных структур
НЛ Гревцов, УП Лопато, ЕБ Чубенко… - Проблемы разработки …, 2022 - elibrary.ru
Исследована структура слоев пористого кремния, сформированных при различных
плотностях тока и продолжительностях анодной электрохимической обработки …
плотностях тока и продолжительностях анодной электрохимической обработки …
[PDF][PDF] СТРУКТУРА И ТЕПЛОПРОВОДНОСТЬ ТОНКИХ ПЛЁНОК СПЛАВА Si1− xGex, СФОРМИРОВАННЫХ ЭЛЕКТРОХИМИЧЕСКИМ ОСАЖДЕНИЕМ …
ЛС Волкова - АВТОМЕТРИЯ, 2023 - iae.nsk.su
Сплошные и пористые плёнки сплавов Si1− xGex с содержанием германия около 40% и
толщиной 3–4 мкм, сформированные на монокристаллическом кремнии методом …
толщиной 3–4 мкм, сформированные на монокристаллическом кремнии методом …