Study of minority carrier traps in p-GaN gate HEMT by optical deep level transient spectroscopy
J Chen, W Huang, H Qu, Y Zhang, J Zhou… - Applied Physics …, 2022 - pubs.aip.org
Properties of minority carrier (electron) traps in Schottky type p-GaN gate high electron
mobility transistors were explicitly investigated by optical deep level transient spectroscopy …
mobility transistors were explicitly investigated by optical deep level transient spectroscopy …
Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates
The electrical characteristics of Schottky contacts on individual threading dislocations (TDs)
with a screw-component in GaN substrates and the structures of these TDs were …
with a screw-component in GaN substrates and the structures of these TDs were …
Investigation of Schottky emission and space charge limited current (SCLC) in Au/SnO2/n-Si Schottky diode with gamma-ray irradiation
The current–voltage characteristics of Au/SnO2/n-Si Schottky diode before and after
irradiation by 60Co γ-ray with an irradiation dose of 10 kGy have been investigated. The …
irradiation by 60Co γ-ray with an irradiation dose of 10 kGy have been investigated. The …
Coexistence of space charge limited and variable range hop** conduction mechanism in sputter-deposited Au/SiC metal–semiconductor–metal device
Despite being the cornerstone of high-temperature and high-power applications, the
fabrication of silicon carbide (SiC) thin films has been a major challenge among research …
fabrication of silicon carbide (SiC) thin films has been a major challenge among research …
Temperature-dependent electrical characteristics of neutron-irradiated GaN Schottky barrier diodes
Temperature-dependent electrical characteristics were explicitly investigated for a 400-μm
diameter neutron-irradiated (NI) GaN Schottky barrier diode (SBD). Based on CV …
diameter neutron-irradiated (NI) GaN Schottky barrier diode (SBD). Based on CV …
Emission and capture characteristics of electron trap (E emi= 0.8 eV) in Si-doped β-Ga2O3 epilayer
H Qu, J Chen, Y Zhang, J Sui, Y Gu… - Semiconductor …, 2022 - iopscience.iop.org
By deep level transient spectroscopy (DLTS), emission and capture behaviors have been
explicitly investigated for a single electron trap in a Si-doped β-Ga 2 O 3 epilayer. Trap …
explicitly investigated for a single electron trap in a Si-doped β-Ga 2 O 3 epilayer. Trap …
Ultra-low turn-on voltage quasi-vertical GaN Schottky barrier diode with homogeneous barrier height
YX Lin, DS Chao, JH Liang, YL Shen, CF Huang… - Solid-State …, 2023 - Elsevier
Abstract Quasi-vertical Schottky Barrier Diodes (SBDs) with near to ideal turn-on voltage and
ideality factor (n) of 1.02, were fabricated on a GaN on Si substrate. The average turn-on …
ideality factor (n) of 1.02, were fabricated on a GaN on Si substrate. The average turn-on …
Research of static and dynamic properties of power semiconductor diodes at low and cryogenic temperatures
M Ostapchuk, D Shishov, D Shevtsov, S Zanegin - Inventions, 2022 - mdpi.com
Systems with high-temperature superconductors (HTSC) impose new requirements on
power conversions, since the main part of the losses in such systems is induced in the …
power conversions, since the main part of the losses in such systems is induced in the …
[HTML][HTML] Electrical performance and reliability analysis of vertical gallium nitride Schottky barrier diodes with dual-ion implanted edge termination
B Li, J Lin, L Gao, Z Ma, H Yang, Z Wu, HC Chiu… - Chip, 2024 - Elsevier
In this study, a gallium nitride (GaN) substrate and its 15 μm epitaxial layer were entirely
grown by adopting the hydride vapor phase epitaxy (HVPE) technique. To enhance the …
grown by adopting the hydride vapor phase epitaxy (HVPE) technique. To enhance the …
Single-trap emission kinetics of vertical β-Ga2O3 Schottky diodes by deep-level transient spectroscopy
J Chen, H Luo, HL Qu, M Zhu, H Guo… - Semiconductor …, 2021 - iopscience.iop.org
Single-trap emission kinetics of vertical β-Ga2O3 Schottky diodes by deep-level transient
spectroscopy - IOPscience Skip to content IOP Science home Accessibility Help Search …
spectroscopy - IOPscience Skip to content IOP Science home Accessibility Help Search …