Quantum‐engineered devices based on 2D materials for next‐generation information processing and storage

A Pal, S Zhang, T Chavan, K Agashiwala… - Advanced …, 2023 - Wiley Online Library
As an approximation to the quantum state of solids, the band theory, developed nearly
seven decades ago, fostered the advance of modern integrated solid‐state electronics, one …

Electronic and optoelectronic applications based on 2D novel anisotropic transition metal dichalcogenides

C Gong, Y Zhang, W Chen, J Chu, T Lei, J Pu… - Advanced …, 2017 - Wiley Online Library
With the continuous exploration of 2D transition metal dichalcogenides (TMDs), novel high‐
performance devices based on the remarkable electronic and optoelectronic natures of 2D …

Valley splitting in the van der Waals heterostructure : The role of atom superposition

Z Zhang, X Ni, H Huang, L Hu, F Liu - Physical Review B, 2019 - APS
A recent experiment shows that the K′ K valley degeneracy can be lifted in monolayer WSe
2 deposited on a layered ferromagnetic substrate of CrI 3. In this work, we take a van der …

Two-dimensional intrinsic ferrovalley with large valley polarization

HX Cheng, J Zhou, W Ji, YN Zhang, YP Feng - Physical Review B, 2021 - APS
Manipulation of the valley degree of freedom provides a novel paradigm in quantum
information technology. In this work, through first principles calculations, we demonstrate …

Van der Waals engineering of ferromagnetic semiconductor heterostructures for spin and valleytronics

D Zhong, KL Seyler, X Linpeng, R Cheng… - Science …, 2017 - science.org
The integration of magnetic material with semiconductors has been fertile ground for
fundamental science as well as of great practical interest toward the seamless integration of …

Valley Manipulation by Optically Tuning the Magnetic Proximity Effect in WSe2/CrI3 Heterostructures

KL Seyler, D Zhong, B Huang, X Linpeng… - Nano …, 2018 - ACS Publications
Monolayer valley semiconductors, such as tungsten diselenide (WSe2), possess valley
pseudospin degrees of freedom that are optically addressable but degenerate in energy …

Monolayer : An intrinsic room-temperature ferrovalley semiconductor

K Sheng, Q Chen, HK Yuan, ZY Wang - Physical Review B, 2022 - APS
Two-dimensional ferrovalley semiconductors with robust room-temperature ferromagnetism
and sizable valley polarization hold great prospects for future miniature information storage …

Concepts of ferrovalley material and anomalous valley Hall effect

WY Tong, SJ Gong, X Wan, CG Duan - Nature communications, 2016 - nature.com
Valleytronics rooted in the valley degree of freedom is of both theoretical and technological
importance as it offers additional opportunities for information storage, as well as electronic …

Enhanced valley splitting in monolayer WSe2 due to magnetic exchange field

C Zhao, T Norden, P Zhang, P Zhao, Y Cheng… - Nature …, 2017 - nature.com
Exploiting the valley degree of freedom to store and manipulate information provides a novel
paradigm for future electronics. A monolayer transition-metal dichalcogenide (TMDC) with a …

Giant valley splitting in monolayer WS2 by magnetic proximity effect

T Norden, C Zhao, P Zhang, R Sabirianov… - Nature …, 2019 - nature.com
Lifting the valley degeneracy of monolayer transition metal dichalcogenides (TMDs) would
allow versatile control of the valley degree of freedom. We report a giant valley exciton …