Rashba effect in functional spintronic devices
Exploiting spin transport increases the functionality of electronic devices and enables such
devices to overcome physical limitations related to speed and power. Utilizing the Rashba …
devices to overcome physical limitations related to speed and power. Utilizing the Rashba …
Graphene spin valves for spin logic devices
An alternative to charge‐based electronics identifies the spin degree of freedom for
information communication and processing. The long spin‐diffusion length in graphene at …
information communication and processing. The long spin‐diffusion length in graphene at …
Control of spin precession in a spin-injected field effect transistor
Spintronics increases the functionality of information processing while seeking to overcome
some of the limitations of conventional electronics. The spin-injected field effect transistor, a …
some of the limitations of conventional electronics. The spin-injected field effect transistor, a …
Hybrid spintronic materials: Growth, structure and properties
Spintronics is an emergent interdisciplinary topic for the studies of spin-based, other than or
in addition to charge-only-based physical phenomena. Since the discovery of giant …
in addition to charge-only-based physical phenomena. Since the discovery of giant …
Electrical detection of coherent spin precession using the ballistic intrinsic spin Hall effect
The spin–orbit interaction in two-dimensional electron systems provides an exceptionally
rich area of research. Coherent spin precession in a Rashba effective magnetic field, in the …
rich area of research. Coherent spin precession in a Rashba effective magnetic field, in the …
Electrical spin injection and transport in semiconductor nanowires: challenges, progress and perspectives
Spintronic devices are of fundamental interest for their nonvolatility and great potential for
low-power electronics applications. The implementation of those devices usually favors …
low-power electronics applications. The implementation of those devices usually favors …
Large Rashba unidirectional magnetoresistance in the Fe/Ge (111) interface states
The structure inversion asymmetry at surfaces and interfaces gives rise to the Rashba spin-
orbit interaction (SOI), that breaks the spin degeneracy of surface or interface states. Hence …
orbit interaction (SOI), that breaks the spin degeneracy of surface or interface states. Hence …
Direct observation of spin accumulation and spin-orbit torque driven by Rashba-Edelstein effect in an InAs quantum-well layer
For semiconductor spintronics, efficient spin generation in semiconductor and spin transfer
to ferromagnetic metal (FM) are essentially required. Two-dimensional electron gas (2DEG) …
to ferromagnetic metal (FM) are essentially required. Two-dimensional electron gas (2DEG) …
Separation of Rashba and Dresselhaus spin-orbit interactions using crystal direction dependent transport measurements
Y Ho Park, H Kim, J Chang, S Hee Han, J Eom… - Applied Physics …, 2013 - pubs.aip.org
The Rashba spin-orbit interaction effective field is always in the plane of the two-
dimensional electron gas and perpendicular to the carrier wavevector but the direction of the …
dimensional electron gas and perpendicular to the carrier wavevector but the direction of the …
Strongly modulated transmission of a spin-split quantum wire with local Rashba interaction
We investigate the transport properties of ballistic quantum wires in the presence of Zeeman
spin splittings and a spatially inhomogeneous Rashba interaction. The Zeeman interaction …
spin splittings and a spatially inhomogeneous Rashba interaction. The Zeeman interaction …