Rashba effect in functional spintronic devices

HC Koo, SB Kim, H Kim, TE Park, JW Choi… - Advanced …, 2020 - Wiley Online Library
Exploiting spin transport increases the functionality of electronic devices and enables such
devices to overcome physical limitations related to speed and power. Utilizing the Rashba …

Graphene spin valves for spin logic devices

P Ghising, C Biswas, YH Lee - Advanced Materials, 2023 - Wiley Online Library
An alternative to charge‐based electronics identifies the spin degree of freedom for
information communication and processing. The long spin‐diffusion length in graphene at …

Control of spin precession in a spin-injected field effect transistor

HC Koo, JH Kwon, J Eom, J Chang, SH Han… - Science, 2009 - science.org
Spintronics increases the functionality of information processing while seeking to overcome
some of the limitations of conventional electronics. The spin-injected field effect transistor, a …

Hybrid spintronic materials: Growth, structure and properties

W Liu, PKJ Wong, Y Xu - Progress in Materials Science, 2019 - Elsevier
Spintronics is an emergent interdisciplinary topic for the studies of spin-based, other than or
in addition to charge-only-based physical phenomena. Since the discovery of giant …

Electrical detection of coherent spin precession using the ballistic intrinsic spin Hall effect

WY Choi, H Kim, J Chang, SH Han, HC Koo… - Nature …, 2015 - nature.com
The spin–orbit interaction in two-dimensional electron systems provides an exceptionally
rich area of research. Coherent spin precession in a Rashba effective magnetic field, in the …

Electrical spin injection and transport in semiconductor nanowires: challenges, progress and perspectives

J Tang, KL Wang - Nanoscale, 2015 - pubs.rsc.org
Spintronic devices are of fundamental interest for their nonvolatility and great potential for
low-power electronics applications. The implementation of those devices usually favors …

Large Rashba unidirectional magnetoresistance in the Fe/Ge (111) interface states

T Guillet, A Marty, C Vergnaud, M Jamet, C Zucchetti… - Physical Review B, 2021 - APS
The structure inversion asymmetry at surfaces and interfaces gives rise to the Rashba spin-
orbit interaction (SOI), that breaks the spin degeneracy of surface or interface states. Hence …

Direct observation of spin accumulation and spin-orbit torque driven by Rashba-Edelstein effect in an InAs quantum-well layer

WB Lee, SB Kim, KW Kim, KJ Lee, HC Koo, GM Choi - Physical Review B, 2021 - APS
For semiconductor spintronics, efficient spin generation in semiconductor and spin transfer
to ferromagnetic metal (FM) are essentially required. Two-dimensional electron gas (2DEG) …

Separation of Rashba and Dresselhaus spin-orbit interactions using crystal direction dependent transport measurements

Y Ho Park, H Kim, J Chang, S Hee Han, J Eom… - Applied Physics …, 2013 - pubs.aip.org
The Rashba spin-orbit interaction effective field is always in the plane of the two-
dimensional electron gas and perpendicular to the carrier wavevector but the direction of the …

Strongly modulated transmission of a spin-split quantum wire with local Rashba interaction

D Sánchez, L Serra, MS Choi - Physical Review B—Condensed Matter and …, 2008 - APS
We investigate the transport properties of ballistic quantum wires in the presence of Zeeman
spin splittings and a spatially inhomogeneous Rashba interaction. The Zeeman interaction …