Evolution of short-range order in chemically and physically grown thin film bilayer structures for electronic applications
AC Dippel, O Gutowski, L Klemeyer, U Boettger, F Berg… - Nanoscale, 2020 - pubs.rsc.org
Functional thin films are commonly integrated in electronic devices as part of a multi-layer
architecture. Metal/oxide/metal structures eg in resistive switching memory and piezoelectric …
architecture. Metal/oxide/metal structures eg in resistive switching memory and piezoelectric …
ITO/polymer/Al from diode-like to memory device: electroforming, multilevel resistive switching, and quantum point contact
GSM de Araújo, HN da Cunha, JMG Neto… - Journal of Materials …, 2024 - Springer
In this work, we present a study on the resistive memory properties of ITO/MEH-PPV/Al
devices. The pristine diode-like device, highly resistive, needs an electroforming process to …
devices. The pristine diode-like device, highly resistive, needs an electroforming process to …
[PDF][PDF] Characterization and Modeling of Spin-Transfer Torque (STT) Magnetic Memory for Computing Applications
R Carboni - Special Topics in Information Technology, 2021 - library.oapen.org
The ubiquitous widespread of mobile devices marked the beginning of the Internet of Things
(IoT) era, where the information is acquired, elaborated and transmitted by billions of …
(IoT) era, where the information is acquired, elaborated and transmitted by billions of …