Algorithm and hardware implementation for visual perception system in autonomous vehicle: A survey

W Shi, MB Alawieh, X Li, H Yu - Integration, 2017 - Elsevier
This paper briefly surveys the recent progress on visual perception algorithms and their
corresponding hardware implementations for the emerging application of autonomous …

A reliable low standby power 10T SRAM cell with expanded static noise margins

E Abbasian, F Izadinasab… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This paper explores a low standby power 10T (LP10T) SRAM cell with high read stability
and write-ability (RSNM/WSNM/WM). The proposed LP10T SRAM cell uses a strong cross …

A low-power convolutional neural network face recognition processor and a CIS integrated with always-on face detector

K Bong, S Choi, C Kim, D Han… - IEEE Journal of Solid …, 2017 - ieeexplore.ieee.org
A Low-power convolutional neural network (CNN)-based face recognition system is
proposed for the user authentication in smart devices. The system consists of two chips: an …

A 4 + 2T SRAM for Searching and In-Memory Computing With 0.3-V

Q Dong, S Jeloka, M Saligane, Y Kim… - IEEE Journal of Solid …, 2017 - ieeexplore.ieee.org
This paper presents a 4+ 2T SRAM for embedded searching and in-memory-computing
applications. The proposed SRAM cell uses the n-well as the write wordline to perform write …

Energy-efficient single-ended read/write 10t near-threshold sram

E Abbasian, S Sofimowloodi - IEEE Transactions on Circuits …, 2023 - ieeexplore.ieee.org
Modern system-on-chip-based applications require low-power/energy SRAMs for long-term
operation. To deal with this issue, near-threshold SRAM design is an effective approach. In …

A highly stable low-energy 10T SRAM for near-threshold operation

E Abbasian - IEEE Transactions on Circuits and Systems I …, 2022 - ieeexplore.ieee.org
This paper aims to explore the design of a novel highly stable low-energy 10T (SLE10T)
SRAM cell for near-threshold operation. The latch core of the proposed design consists of a …

A FinFET-based low-power, stable 8T SRAM cell with high yield

E Mani, P Nimmagadda, SJ Basha… - … -International Journal of …, 2024 - Elsevier
Modern battery-enabled systems, such as IoT, require SRAM cells that can maintain data
and respond quickly to requests. However, achieving low-power and stable SRAM cells …

Design of a Schmitt-trigger-based 7T SRAM cell for variation resilient low-energy consumption and reliable internet of things applications

E Abbasian, M Gholipour - AEU-International Journal of Electronics and …, 2021 - Elsevier
The internet of things (IoTs)-based systems require battery-enabled energy-efficient memory
circuits to operate at low voltage domain, especially below the transistor's threshold. This …

A 1-Mb 28-nm 1T1MTJ STT-MRAM With Single-Cap Offset-Cancelled Sense Amplifier and In Situ Self-Write-Termination

Q Dong, Z Wang, J Lim, Y Zhang… - IEEE Journal of Solid …, 2018 - ieeexplore.ieee.org
1T1MTJ spin-transfer-torque (STT)-MRAM is a promising candidate for next-generation high-
density embedded non-volatile memory. This paper presents a 1-Mb 28-nm 1T1MTJ STT …

A single-ended low leakage and low voltage 10T SRAM cell with high yield

N Eslami, B Ebrahimi, E Shakouri, D Najafi - Analog Integrated Circuits and …, 2020 - Springer
This paper presents a low leakage power 10T single-ended SRAM cell in the sub-threshold
region that improves read, write, and hold stability. While at low voltages, the write-ability is …