Atomically thin ohmic edge contacts between two-dimensional materials

MHD Guimaraes, H Gao, Y Han, K Kang, S **e… - ACS …, 2016 - ACS Publications
With the decrease of the dimensions of electronic devices, the role played by electrical
contacts is ever increasing, eventually coming to dominate the overall device volume and …

Multilayer MoS 2 growth by metal and metal oxide sulfurization

MH Heyne, D Chiappe, J Meersschaut… - Journal of Materials …, 2016 - pubs.rsc.org
We investigated the deposition of MoS2 multilayers on large area substrates. The pre-
deposition of metal or metal oxide with subsequent sulfurization is a promising technique to …

Reliability of single-layer MoS2 field-effect transistors with SiO2 and hBN gate insulators

YY Illarionov, M Waltl, MM Furchi… - 2016 IEEE …, 2016 - ieeexplore.ieee.org
We study the hysteresis and bias-temperature instabilities in single-layer MoS 2 FETs with
SiO 2 and hBN gate insulators and attempt to capture the correlation between these …

[KNJIGA][B] Large-Scale Films and Coherent Heterostructures of Atomic Thickness

S **e - 2018 - search.proquest.com
Thin film materials are the key elements in modern technology, including electronics and
photonics. The production of semiconducting thin films with spatially-controlled composition …