Recent progress of InGaN-Based red light emitting diodes
Z Lu, K Zhang, J Zhuang, J Lin, Z Lu, Z Jiang… - Micro and …, 2023 - Elsevier
Micro-LEDs have been hailed as the next generation display technology due to the
advantages of high brightness, high ambient contrast ratio, and high reliability. The In x Ga 1 …
advantages of high brightness, high ambient contrast ratio, and high reliability. The In x Ga 1 …
Growth of highly relaxed InGaN pseudo-substrates over full 2-in. wafers
A highly relaxed InGaN buffer layer was demonstrated over a full two-inch c-plane sapphire
substrate by metalorganic chemical vapor deposition. The InGaN buffer layer was grown on …
substrate by metalorganic chemical vapor deposition. The InGaN buffer layer was grown on …
Wafer-scale emission uniformity of InGaN-based red light-emitting diodes on an in situ InGaN decomposition template
J Hu, K ** of layers surrounding GaN/InGaN multiple quantum wells on their thermal stability
Abstract GaN/InGaN quantum wells (QWs), widely used as the active region in blue and
green light emitters, are susceptible to structural degradation at temperatures above 900° C …
green light emitters, are susceptible to structural degradation at temperatures above 900° C …
Demonstration of III-nitride red LEDs on Si substrates via strain-relaxed template by InGaN decomposition layer
A III-nitride red LED with an active region temperature of 835° C on a Si substrate utilizing a
strain-relaxed template (SRT) is demonstrated. The peak wavelength blueshifts from 670 nm …
strain-relaxed template (SRT) is demonstrated. The peak wavelength blueshifts from 670 nm …
Structural, Optical, and Electrical Characterization of 643 nm Red InGaN Multiquantum Wells Grown on Strain‐Relaxed InGaN Templates
Red‐emitting (≈ 643 nm) InGaN multiquantum well active device layers and micro‐LEDs
are grown by metal organic chemical vapor deposition (MOCVD) on relaxed InGaN …
are grown by metal organic chemical vapor deposition (MOCVD) on relaxed InGaN …
Advances and Opportunities in Closed Gas-Cell Transmission Electron Microscopy
Direct in situ characterizations of the solid–fluid interface on the nanoscale can provide
profound implications for addressing bulk-scale enigmas. The advent of closed-cell …
profound implications for addressing bulk-scale enigmas. The advent of closed-cell …
AlGaN Polarized Ultrathin Tunneling Junction Deep Ultraviolet Light-Emitting Diodes
Z Zhang, S Zhou, Z Liao, J Jiang, H Geng, Z Lv… - Nano Letters, 2024 - ACS Publications
Deep ultraviolet light-emitting diodes (DUV-LEDs) are hindered by optical losses and high
operating voltages, primarily due to p-contact layers such as light absorption in p-GaN or …
operating voltages, primarily due to p-contact layers such as light absorption in p-GaN or …
Nitrogen Complex-Driven Vacancy Cluster in Group-III Nitrides
A series of experiments have elucidated the primary defects in group-III nitride epilayers,
identifying vacancy clusters due to cation migration at interfaces to mitigate strained lattice …
identifying vacancy clusters due to cation migration at interfaces to mitigate strained lattice …
Startified thermal degradation in blue InGaN quantum well structures: P-GaN growth temperature and its influence on quantum well optical properties
Z Chen, F Liang, D Zhao, J Yang, Z Liu - Journal of Alloys and Compounds, 2024 - Elsevier
Thermal degradation in blue InGaN multi-quantum well (MQW) structures induced by
varying high p-GaN growth temperature and the subsequent influence on the optical …
varying high p-GaN growth temperature and the subsequent influence on the optical …