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Carbon-based electronics
The semiconductor industry has been able to improve the performance of electronic systems
for more than four decades by making ever-smaller devices. However, this approach will …
for more than four decades by making ever-smaller devices. However, this approach will …
Ultrathin films of single‐walled carbon nanotubes for electronics and sensors: a review of fundamental and applied aspects
Ultrathin films of single‐walled carbon nanotubes (SWNTs) represent an attractive,
emerging class of material, with properties that can approach the exceptional electrical …
emerging class of material, with properties that can approach the exceptional electrical …
Carbon nanotube transistors scaled to a 40-nanometer footprint
The International Technology Roadmap for Semiconductors challenges the device research
community to reduce the transistor footprint containing all components to 40 nanometers …
community to reduce the transistor footprint containing all components to 40 nanometers …
A compact SPICE model for carbon-nanotube field-effect transistors including nonidealities and its application—Part I: Model of the intrinsic channel region
J Deng, HSP Wong - IEEE Transactions on Electron Devices, 2007 - ieeexplore.ieee.org
This paper presents a circuit-compatible compact model for the intrinsic channel region of
the MOSFET-like single-walled carbon-nanotube field-effect transistors (CNFETs). This …
the MOSFET-like single-walled carbon-nanotube field-effect transistors (CNFETs). This …
Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates
The ability to form integrated circuits on flexible sheets of plastic enables attributes (for
example conformal and flexible formats and lightweight and shock resistant construction) in …
example conformal and flexible formats and lightweight and shock resistant construction) in …
A compact SPICE model for carbon-nanotube field-effect transistors including nonidealities and its application—Part II: Full device model and circuit performance …
J Deng, HSP Wong - IEEE Transactions on Electron Devices, 2007 - ieeexplore.ieee.org
This paper presents a complete circuit-compatible compact model for single-walled carbon-
nanotube field-effect transistors (CNFETs) as an extension to Part 1 of this two-part paper …
nanotube field-effect transistors (CNFETs) as an extension to Part 1 of this two-part paper …
Toward high-performance digital logic technology with carbon nanotubes
The slow-down in traditional silicon complementary metal-oxide–semiconductor (CMOS)
scaling (Moore's law) has created an opportunity for a disruptive innovation to bring the …
scaling (Moore's law) has created an opportunity for a disruptive innovation to bring the …
A compact virtual-source model for carbon nanotube FETs in the sub-10-nm regime—Part I: Intrinsic elements
We present a data-calibrated compact model of carbon nanotube (CNT) FETs (CNTFETs)
based on the virtual-source (VS) approach, describing the intrinsic current-voltage and …
based on the virtual-source (VS) approach, describing the intrinsic current-voltage and …
Graphene versus carbon nanotubes in electronic devices
Advances in semiconductor device during last few decades enable us to improve the
electronic device performance by minimizing the device dimension. However, further …
electronic device performance by minimizing the device dimension. However, further …
Infrared spectroscopy of wafer-scale graphene
We report spectroscopy results from the mid-to far-infrared on wafer-scale graphene, grown
either epitaxially on silicon carbide or by chemical vapor deposition. The free carrier …
either epitaxially on silicon carbide or by chemical vapor deposition. The free carrier …