[HTML][HTML] Development of GaN HEMTs fabricated on silicon, silicon-on-insulator, and engineered substrates and the heterogeneous integration
LH Hsu, YY Lai, PT Tu, C Langpoklakpam, YT Chang… - Micromachines, 2021 - mdpi.com
GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from
the high-frequency power amplifier to the high voltage devices used in power electronic …
the high-frequency power amplifier to the high voltage devices used in power electronic …
High performance and highly robust AlN/GaN HEMTs for millimeter-wave operation
K Harrouche, R Kabouche, E Okada… - IEEE Journal of the …, 2019 - ieeexplore.ieee.org
We report on a 3 nm AlN/GaN HEMT technology for millimeter-wave applications. Electrical
characteristics for a 110 nm gate length show a maximum drain current density of 1.2 A/mm …
characteristics for a 110 nm gate length show a maximum drain current density of 1.2 A/mm …
Improved AlScN/GaN heterostructures grown by metal-organic chemical vapor deposition
AlScN/GaN epitaxial heterostructures have raised much interest in recent years, because of
the high potential of such structures for high-frequency and high-power electronic …
the high potential of such structures for high-frequency and high-power electronic …
Impact of undoped channel thickness and carbon concentration on AlN/GaN-on-SiC HEMT performances
K Harrouche, S Venkatachalam… - Applied Physics …, 2022 - iopscience.iop.org
We report on a vertically scaled AlN/GaN high electron mobility transistor technology design
optimization for millimeter-wave applications. The undoped GaN channel thickness and …
optimization for millimeter-wave applications. The undoped GaN channel thickness and …
Low trap** effects and high electron confinement in short AlN/GaN-On-SiC HEMTs by means of a thin AlGaN back barrier
K Harrouche, S Venkatachalam, L Ben-Hammou… - Micromachines, 2023 - mdpi.com
In this paper, we report on an enhancement of mm-wave power performances with a
vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a …
vertically scaled AlN/GaN heterostructure. An AlGaN back barrier is introduced underneath a …
A High RF-Performance AlGaN/GaN HEMT With Ultrathin Barrier and Stressor In Situ SiN
The submicrometer gate HEMT is fabricated with an ultrathin-barrier (UTB) AlGaN/gallium
nitride (GaN) combined with in situ SiN passivation. The sheet resistance of the UTB Al 0.2 …
nitride (GaN) combined with in situ SiN passivation. The sheet resistance of the UTB Al 0.2 …
Demonstration of 16 THz V Johnson's figure-of-merit and 36 THz V fmax· VBK in ultrathin barrier AlGaN/GaN HEMTs with slant-field-plate T-gates
In this work, ultrathin barrier (∼ 6 nm) AlGaN/GaN high-electron-mobility transistors
(HEMTs) with in situ SiN gate dielectric and slant-field plate (SFP) T-gates were fabricated …
(HEMTs) with in situ SiN gate dielectric and slant-field plate (SFP) T-gates were fabricated …
[HTML][HTML] Impact of Al profile in high-Al content AlGaN/GaN HEMTs on the 2DEG properties
Ultra-thin high-Al content barrier layers can enable improved gate control and high-
frequency operation of AlGaN/GaN high electron mobility transistors (HEMTs) but the …
frequency operation of AlGaN/GaN high electron mobility transistors (HEMTs) but the …
High Power AlN/GaN HEMTs with record power-added-efficiency> 70% at 40 GHz
K Harrouche, R Kabouche, E Okada… - 2020 IEEE/MTT-S …, 2020 - ieeexplore.ieee.org
We report on breakthrough power-added-efficiency (PAE) Q-band performances using a
vertically scaled AlN/GaN HEMT technology. The comparison between a 3 nm and 4 nm …
vertically scaled AlN/GaN HEMT technology. The comparison between a 3 nm and 4 nm …
Analysis of MOCVD SiNx Passivated N-Polar GaN MIS-HEMTs on Sapphire With High
This letter presents an analysis of N-polar metal-insulator-semiconductor high-electron-
mobility transistors (MIS-HEMTs) with a 40 nm MOCVD SiN x passivation and a trench-gate …
mobility transistors (MIS-HEMTs) with a 40 nm MOCVD SiN x passivation and a trench-gate …