Transition metal dichalcogenide MoS2 field-effect transistors for analog circuits: A simulation study
B Wei, C Lu - AEU-International Journal of Electronics and …, 2018 - Elsevier
As the scaling of silicon MOSFET approaches to its physical limit, research efforts have been
made in exploring alternative devices. In this work, fundamental design metrics of analog …
made in exploring alternative devices. In this work, fundamental design metrics of analog …
Exploring device-circuit co-design in LC VCO circuits using monolayer transition metal dischalcogenide MoS2 field-effect transistors
B Wei, C Lu - AEU-International Journal of Electronics and …, 2021 - Elsevier
In this paper, we first investigate the noise model for 2D-TMD monolayer molybdenum
disulfide (MoS 2) transistors. With a proposed noise model, simulation results of low …
disulfide (MoS 2) transistors. With a proposed noise model, simulation results of low …
Flexible high frequency electronics and plasmonics using two dimensional nanomaterials
M Nagavalli Yogeesh - 2017 - repositories.lib.utexas.edu
In this work, we have demonstrated novel flexible electronics and plasmonic devices using 2-
dimensional (2D) nanomaterials (graphene and MoS2). The first part of this work is about …
dimensional (2D) nanomaterials (graphene and MoS2). The first part of this work is about …