Charge transfer efficiency improvement of a 4-T pixel by the optimization of electrical potential distribution under the transfer gate
Y Li, B Li, J Xu, Z Gao, C Xu, Y Sun - Journal of Semiconductors, 2012 - iopscience.iop.org
The charge transfer efficiency improvement method is introduced by optimizing the electrical
potential distribution under the transfer gate along the charge transfer path. A non-uniform …
potential distribution under the transfer gate along the charge transfer path. A non-uniform …
Collection efficiency and charge transfer optimization for a 4-T pixel with multi n-type implants
W Li, J Xu, C Xu, B Li, S Yao - Journal of Semiconductors, 2011 - iopscience.iop.org
In order to increase collection efficiency and eliminate image lag, multi n-type implants were
introduced into the process of a pinned-photodiode. For the purpose of improving the …
introduced into the process of a pinned-photodiode. For the purpose of improving the …
Process techniques of charge transfer time reduction for high speed CMOS image sensors
Z Cao, Q Li, Y Han, Q Qin, P Feng, L Liu… - Journal of …, 2014 - iopscience.iop.org
This paper proposes pixel process techniques to reduce the charge transfer time in high
speed CMOS image sensors. These techniques increase the lateral conductivity of the photo …
speed CMOS image sensors. These techniques increase the lateral conductivity of the photo …
Double junction photodiode for X-ray CMOS sensor IC
C Xu, Y Sun, Y Han, D Zhu - Journal of semiconductors, 2014 - iopscience.iop.org
Abstract A CMOS compatible P+/N well/P sub double junction photodiode pixel was
proposed, which can efficiently detect fluorescence from CsI (Tl) scintillation in an X-ray …
proposed, which can efficiently detect fluorescence from CsI (Tl) scintillation in an X-ray …
A global shutter CMOS image sensor with wide dynamic range pixel
J Xu, Z Yang, S Zhao, S Yao - International Symposium on …, 2009 - spiedigitallibrary.org
A novel five transistor global shutter CMOS active pixel with ultra-high dynamic range is
presented in this paper. A global shutter control transistor is added to traditional four …
presented in this paper. A global shutter control transistor is added to traditional four …
[HTML][HTML] 漏电流对 CMOS 探测器成像品质的影响分析
唐庆博, 唐超, 张恒浩 - 航天返回与遥感, 2017 - fx361.com
CMOS 探测器**年来在工业, 民用, 航天等领域得到了广泛的应用, 而漏电流对CMOS
探测器成像品质影响的研究却较少. 文章针对CMOS 探测器在低读出速率时造成图像噪声过大 …
探测器成像品质影响的研究却较少. 文章针对CMOS 探测器在低读出速率时造成图像噪声过大 …
[CITATION][C] Charge transfer efficiency improvement of a 4-T pixel by the optimization of electrical potential distribution under the transfer gate
**毅**, **斌桥, 徐江涛, 高志远, 徐超, 孙羽 - 半导体学报: 英文版, 2012
[CITATION][C] Collection efficiency and charge transfer optimization for a 4-T pixel with multi n-type implants
**伟**, 徐江涛, 徐超, **斌桥, 姚素英 - Journal of Semiconductors, 2011
[CITATION][C] 低噪声四管像素 CMOS 图像传感器设计与实现
徐江涛, **斌桥, 姚素英, 任张** - 天津大学学报, 2009
[CITATION][C] Process techniques of charge transfer time reduction for high speed CMOS image sensors
曹中祥, **全良, **烨, 秦琦, 冯鹏, 刘力源, 吴南健 - 半导体学报: 英文版, 2014