[HTML][HTML] Electronic structure methods for simulating the applied potential in semiconductor electrochemistry

K Moradi, MM Melander - Current Opinion in Electrochemistry, 2024 - Elsevier
Semiconductor electrodes (SCEs) play a decisive role in eg clean energy conversion
technologies but understanding their complex electrochemistry remains an outstanding …

Nonempirical range-separated hybrid functional with spatially dependent screened exchange

J Zhan, M Govoni, G Galli - Journal of Chemical Theory and …, 2023 - ACS Publications
Electronic structure calculations based on density functional theory (DFT) have successfully
predicted numerous ground-state properties of a variety of molecules and materials …

Many-Body Effects at Heterogeneous Interfaces from First-Principles: Progress, Challenges, and Opportunities

ZF Liu - ACS nano, 2025 - ACS Publications
Heterogeneous interfaces are pivotal in numerous nanoscale devices and applications. First-
principles approaches based on quantum mechanics and atomistic structures provide …

InterMat: accelerating band offset prediction in semiconductor interfaces with DFT and deep learning

K Choudhary, KF Garrity - Digital Discovery, 2024 - pubs.rsc.org
We introduce a computational framework (InterMat) to predict band offsets of semiconductor
interfaces using density functional theory (DFT) and graph neural networks (GNN). As a first …

Simple and effective screening parameter for range-separated dielectric-dependent hybrids

S Jana, A Ghosh, LA Constantin, P Samal - Physical Review B, 2023 - APS
A simple effective screening parameter for the screened range-separated exchange-
correlation hybrid functional is constructed from the compressibility sum rule, in the context …

Enabling Type I Lattice-Matched Heterostructures in SiGeSn Alloys Through Engineering Composition and Short-Range Order: A First-Principles Perspective

X **, S Chen, T Li - IEEE Journal of Selected Topics in …, 2024 - ieeexplore.ieee.org
Tuning the composition in group IV alloys can significantly change their electronic structures,
enabling a broad range of properties for electronic, photonic, and topological applications …

[HTML][HTML] Current density functional framework for spin–orbit coupling: Extension to periodic systems

YJ Franzke, C Holzer - The Journal of Chemical Physics, 2024 - pubs.aip.org
Spin–orbit coupling induces a current density in the ground state, which consequently
requires a generalization for meta-generalized gradient approximations. That is, the …

First-Principles Assessment of ZnTe and CdSe as Prospective Tunnel Barriers at the InAs/Al Interface

MJA Jardine, D Dardzinski, Z Cai… - … Applied Materials & …, 2024 - ACS Publications
Majorana zero modes are predicted to emerge in semiconductor/superconductor interfaces,
such as InAs/Al. Majorana modes could be utilized for fault tolerant topological qubits …

Ab-initio study of strain-tunable g-GaN/BN nanoheterostructure for optoelectronic and photocatalytic applications

Nitika, DS Ahlawat, S Arora - Journal of Molecular Modeling, 2024 - Springer
Abstract Context Two-dimensional (2D) nanoheterostructures of materials, integrating
various phase or materials into a single nanosheet have stimulated large-scale research …