Nonpolar and semipolar III-nitride-based blue and green light-emitting diodes (LEDs) have
been extensively investigated as potential replacements for current polar c-plane LEDs …

The performance of III‐nitride devices is degraded by polarization in a wurtzite crystal
structure. Nonpolar and semipolar III‐nitrides have been extensively studied since the early …

Solid‐state lighting (SSL) is now the most efficient source of high color quality white light
ever created. Nevertheless, the blue InGaN light‐emitting diodes (LEDs) that are the light …

We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel
junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to …

More than two decades of III-N materials research has led to the production of visible
spectrum commercial light-emitting diodes (LEDs) and laser diodes (LDs). Commercial c …

Devices grown on nonpolar and semipolar planes of GaN offer key performance advantages
over devices grown on the conventional c-plane, including reduced polarization fields. This …

So far, the semiconductor nanowire research area has mainly delivered results on growth
procedures and related material properties. As the development lately has been successful …

We demonstrate green emission from InGaN/GaN multiple quantum wells (MQWs) grown on
m-plane sidewalls of GaN wires. To tune the emission wavelength, InGaN radial wells were …

We investigate the influence of inhomogeneous broadening on the optical polarization
properties of high-inclination semipolar and nonpolar In x Ga 1− x N/GaN quantum wells …

We establish the relationships between growth conditions, strain state, optical and structural
properties of nonpolar m-plane (10 1 0) InGaN with indium composition up to 39% grown by …