Frontiers in the growth of complex oxide thin films: past, present, and future of hybrid MBE
Driven by an ever‐expanding interest in new material systems with new functionality, the
growth of atomic‐scale electronic materials by molecular beam epitaxy (MBE) has evolved …
growth of atomic‐scale electronic materials by molecular beam epitaxy (MBE) has evolved …
Ion implantation in III–V semiconductor technology
SJ Pearton - International Journal of Modern Physics B, 1993 - World Scientific
A review is given of the applications of ion implantation in III–V compound semiconductor
device technology, beginning with the fundamentals of ion stop** in these materials and …
device technology, beginning with the fundamentals of ion stop** in these materials and …
Revealing the do** density in perovskite solar cells and its impact on device performance
Traditional inorganic semiconductors can be electronically doped with high precision.
Conversely, there is still conjecture regarding the assessment of the electronic do** …
Conversely, there is still conjecture regarding the assessment of the electronic do** …
High-performance oxide-confined GaAs VCSELs
B Weigl, M Grabherr, C Jung, R Jager… - IEEE Journal of …, 1997 - ieeexplore.ieee.org
We present GaAs based selectively oxidized VCSELs with record high 57% wallplug
efficiencies emitting in the 820-860-nm wavelength regime. Solid source molecular beam …
efficiencies emitting in the 820-860-nm wavelength regime. Solid source molecular beam …
Very high carbon incorporation in metalorganic vapor phase epitaxy of heavily doped p‐type GaAs
MC Hanna, ZH Lu, A Majerfeld - Applied physics letters, 1991 - pubs.aip.org
Very high C incorporation (> lo*'cm-3) in GaAs was achieved by atmospheric pressure
metalorganic vapor phase epitaxy (AP-MGVPE) using CClb as a dopan; gas. Hole densities …
metalorganic vapor phase epitaxy (AP-MGVPE) using CClb as a dopan; gas. Hole densities …
Carbon do** of III–V compounds grown by MOMBE
Recent advances in heterostructure bipolar transistor (HBT) technology have created a need
for p-type do** at levels≥ 10 20 cm-3. We have achieved p-type do** levels as high as …
for p-type do** at levels≥ 10 20 cm-3. We have achieved p-type do** levels as high as …
Effects of point defects on lattice parameters of semiconductors
NF Chen, Y Wang, H He, L Lin - Physical Review B, 1996 - APS
A model for analyzing the correlation between lattice parameters and point defects in
semiconductors has been established. The results of this model for analyzing the substitutes …
semiconductors has been established. The results of this model for analyzing the substitutes …
Compound semiconductor growth by metallorganic molecular beam epitaxy (MOMBE)
CR Abernathy - Materials Science and Engineering: R: Reports, 1995 - Elsevier
The replacement of elemental sources with gaseous precursors allows many of the
advantages of metallorganic chemical vapour deposition (MOCVD) to be combined with …
advantages of metallorganic chemical vapour deposition (MOCVD) to be combined with …
Role of surface chemistry in semiconductor thin film processing
JG Ekerdt, YM Sun, A Szabo, GJ Szulczewski… - Chemical …, 1996 - ACS Publications
Microelectronics plays a major role in a host of late twentieth century technologies.
Everywhere you look, microprocessors seem to be present. Taking the venerable …
Everywhere you look, microprocessors seem to be present. Taking the venerable …
Hydrogen in carbon‐doped GaAs grown by metalorganic molecular beam epitaxy
DM Kozuch, M Stavola, SJ Pearton… - Applied physics …, 1990 - pubs.aip.org
Atomic profiles show that hydrogen is incorporated in GaAs: C that has been grown by
metalorganic molecular beam epitaxy. The hydrogen concentration has been found to be …
metalorganic molecular beam epitaxy. The hydrogen concentration has been found to be …