Generation and measurement of ultrashort, subpicosecond pulses of electromagnetic
radiation with their characteristic Fourier spectra that reach far into terahertz (THz) frequency …

We report a giant bowing of the spin-orbit splitting energy Δ 0 in the dilute GaAs 1-x Bi x
alloy for Bi concentrations ranging from 0% to 1.8%. This is the first observation of a large …

We show that the band gap bowing trends observed in III-V alloys containing dilute
concentrations of Sb or Bi can be explained within the framework of the valence-band …

The optical properties of Ga Bi x As 1− x (0.04< x< 0.08) grown by molecular beam epitaxy
have been studied by photomodulated reflectance spectroscopy. The alloys exhibit a strong …

We develop an atomistic, nearest-neighbor sp 3 s* tight-binding Hamiltonian to investigate
the electronic structure of dilute bismide alloys of GaP and GaAs. Using this model, we …

GaAsBiN is a potentially interesting alloy which may be exploited in near-and mid-infrared
photonic devices. Here we present the predicted band parameters such as band gap (E g) …

Coupled quantum dots (CQDs) that consist of two InAs QDs stacked along the growth
direction and separated by a relatively thin tunnel barrier have been the focus of extensive …

The GaBi x As 1− x bismide III-V semiconductor system remains a relatively underexplored
alloy particularly with regards to its detailed electronic band structure. Of particular …

Highly mismatched semiconductor alloys such as GaN x As 1− x and GaBi x As 1− x have
several novel electronic properties, including a rapid reduction in energy gap with …

Room temperature photoluminescence (PL) spectra have been measured for GaAs 1− x Bi x
alloys with Bi concentrations in the 0.2%–10.6% range. The decrease in the PL peak energy …