Junction less field effect transistor, also known as JLFET, is widely regarded as the most
promising candidate that has the potential to replace the more conventional MOSFET used …

The junctionless transistor consists of a piece of uniformly doped semiconductor with a gate
placed between the source and drain contacts and is, therefore, the simplest transistor …

Junction-less nanowire transistors are being investigated to solve short channel effects in
future CMOS technology. Here we demonstrate 8 nm diameter silicon nanowire junction …

In this paper, we evidence the link between the planar and cylindrical junctionless field effect
transistors (JL-FETs) from the electrostatics and current point of view. In particular, we show …

This paper describes the impression of low-k/high-k dielectric on the performance of Double
Gate Junction less (DG-JL) MOSFET. An analytical model of the threshold voltage of DG …

A new compact analytical model for short channel triple gate junctionless transistors is
proposed. Based on a previous model for double-gate transistors which neglected the fin …

This work proposes a physically-based definition for the threshold voltage, V TH, of
junctionless nanowire transistors and a methodology to extract it. The V TH is defined as the …

A new charge-based analytical compact model for the drain current of junctionless (JL) triple-
gate MOSFETs is presented, which includes the short-channel effects, the saturation velocity …

In this paper, a surface potential-based drain current model is developed to explore the
static and quasi-static performance of substrate-biased tri-gate junctionless field-effect …

Analytical models for channel potential, threshold voltage, and subthreshold swing of the
short-channel fin-shaped field-effect transistor (FinFET) are obtained. The analytical model …