Review of gallium-oxide-based solar-blind ultraviolet photodetectors

X Chen, F Ren, S Gu, J Ye - Photonics Research, 2019‏ - opg.optica.org
Solar-blind photodetectors are of great interest to a wide range of industrial, civil,
environmental, and biological applications. As one of the emerging ultrawide-bandgap …

Effect of extended defects on photoluminescence of gallium oxide and aluminum gallium oxide epitaxial films

J Cooke, P Ranga, J Jesenovec, JS McCloy… - Scientific Reports, 2022‏ - nature.com
In this work, a systematic photoluminescence (PL) study on three series of gallium
oxide/aluminum gallium oxide films and bulk single crystals is performed including …

High transmittance β-Ga2O3 thin films deposited by magnetron sputtering and post-annealing for solar-blind ultraviolet photodetector

J Wang, L Ye, X Wang, H Zhang, L Li, C Kong… - Journal of Alloys and …, 2019‏ - Elsevier
Abstract Monoclinic Ga 2 O 3 (β-Ga 2 O 3) thin films were deposited on c-plane sapphire
substrates via radio frequency magnetron sputtering method followed by post-annealing …

Ultra-stable, sensitive and broadband photodetector based on large-area 2D bismuth oxyselenide film for multiband image sensing

S Ren, S Gao, P Rong, L Li, M Zhang, H Lu… - Chemical Engineering …, 2023‏ - Elsevier
Abstract Two-dimensional (2D) materials have proven to be a highly promising candidate for
applications in electronic and optoelectronic devices due to their attractive structure and …

[HTML][HTML] Atomic scale investigation of aluminum incorporation, defects, and phase stability in β-(AlxGa1− x) 2O3 films

JM Johnson, HL Huang, M Wang, S Mu, JB Varley… - APL Materials, 2021‏ - pubs.aip.org
The development of novel ultra-wide bandgap (UWBG) materials requires precise
understanding of the atomic level structural origins that give rise to their important properties …

Gallium oxide-based solar-blind ultraviolet photodetectors

X Chen, FF Ren, J Ye, S Gu - Semiconductor science and …, 2020‏ - iopscience.iop.org
Abstract Gallium oxide (Ga 2 O 3) is an emerging ultrawide bandgap (UWBG)
semiconducting material as a key building block for the applications of power electronics …

Carrier Transport and Gain Mechanisms in –Ga2O3-Based Metal–Semiconductor–Metal Solar-Blind Schottky Photodetectors

Y Xu, X Chen, D Zhou, F Ren, J Zhou… - … on Electron Devices, 2019‏ - ieeexplore.ieee.org
In this paper, carrier transport and gain mechanisms are exploited in the β-Ga 2 O 3-based
metal-semiconductor-metal photodetectors with Au back-to-back Schottky contacts. The …

Solar-blind photodetectors based on MXenes–β-Ga2O3 Schottky junctions

Y Chen, K Zhang, X Yang, X Chen, J Sun… - Journal of Physics D …, 2020‏ - iopscience.iop.org
In this work, high-performance solar-blind photodetectors based on MXenes–β-Ga 2 O 3
Schottky junctions have been developed by utilizing transparent conductive MXenes as the …

[HTML][HTML] Alloyed β-(AlxGa1− x) 2O3 bulk Czochralski single β-(Al0. 1Ga0. 9) 2O3 and polycrystals β-(Al0. 33Ga0. 66) 2O3, β-(Al0. 5Ga0. 5) 2O3), and property trends

J Jesenovec, B Dutton, N Stone-Weiss… - Journal of Applied …, 2022‏ - pubs.aip.org
In this work, bulk Czochralski-grown single crystals of 10 mol.% Al 2 O 3 alloyed β-Ga 2 O 3—
monoclinic 10% AGO or β-(Al 0.1 Ga 0.9) 2 O 3—are obtained, which show+ 0.20 eV …

A review of recent developments in aluminum gallium oxide thin films and devices

AK Saikumar, SD Nehate… - Critical Reviews in Solid …, 2022‏ - Taylor & Francis
Inspired by the success of gallium oxide as a wide bandgap semiconductor, aluminum
gallium oxide films which possess higher bandgap values have been researched …