Luminescence and Degeneration Mechanism of Perovskite Light‐Emitting Diodes and Strategies for Improving Device Performance

F Qin, M Lu, P Lu, S Sun, X Bai, Y Zhang - Small Methods, 2023 - Wiley Online Library
Perovskite light‐emitting diodes (PeLEDs) can be a promising technology for next‐
generation display and lighting applications due to their excellent optoelectronic properties …

Bright colloidal quantum dot light-emitting diodes enabled by efficient chlorination

X Li, YB Zhao, F Fan, L Levina, M Liu… - Nature …, 2018 - nature.com
The external quantum efficiencies of state-of-the-art colloidal quantum dot light-emitting
diodes (QLEDs) are now approaching the limit set by the out-coupling efficiency. However …

Efficiency models for GaN-based light-emitting diodes: Status and challenges

J Piprek - Materials, 2020 - mdpi.com
Light-emitting diodes (LEDs) based on Gallium Nitride (GaN) have been revolutionizing
various applications in lighting, displays, biotechnology, and other fields. However, their …

Full-color micro-LED display with high color stability using semipolar (20-21) InGaN LEDs and quantum-dot photoresist

SWH Chen, YM Huang, KJ Singh, YC Hsu… - Photonics …, 2020 - opg.optica.org
Red-green-blue (RGB) full-color micro light-emitting diodes (μ-LEDs) fabricated from
semipolar (20-21) wafers, with a quantum-dot photoresist color-conversion layer, were …

Designs of InGaN micro-LED structure for improving quantum efficiency at low current density

S Lu, J Li, K Huang, G Liu, Y Zhou, D Cai… - Nanoscale research …, 2021 - Springer
Here we report a comprehensive numerical study for the operating behavior and physical
mechanism of nitride micro-light-emitting-diode (micro-LED) at low current density. Analysis …

Measuring the internal quantum efficiency of light-emitting diodes: Towards accurate and reliable room-temperature characterization

JI Shim, DS Shin - Nanophotonics, 2018 - degruyter.com
For accurate and reliable measurement of the internal quantum efficiency (IQE) of light-
emitting diodes (LEDs), the method should be theoretically solid and experimentally simple …

Generated carrier dynamics in V-pit-enhanced InGaN/GaN light-emitting diode

IA Ajia, PR Edwards, Y Pak, E Belekov… - ACS …, 2017 - ACS Publications
We investigate the effects of V-pits on the optical properties of a state-of-the-art, highly
efficient, blue InGaN/GaN multi-quantum-well (MQW) light-emitting diode (LED) with a high …

Disentangling the impact of point defect density and carrier localization-enhanced auger recombination on efficiency droop in (In, Ga) N/GaN quantum wells

RM Barrett, JM McMahon, R Ahumada-Lazo… - ACS …, 2023 - ACS Publications
The internal quantum efficiency of (In, Ga) N/GaN quantum wells can surpass 90% for blue-
emitting structures at moderate drive current densities but decreases significantly for longer …

[HTML][HTML] A review on experimental measurements for understanding efficiency droop in InGaN-based light-emitting diodes

L Wang, J **, C Mi, Z Hao, Y Luo, C Sun, Y Han… - Materials, 2017 - mdpi.com
Efficiency droop in GaN-based light emitting diodes (LEDs) under high injection current
density perplexes the development of high-power solid-state lighting. Although the relevant …

Near‐complete elimination of size‐dependent efficiency decrease in GaN micro‐light‐emitting diodes

J Zhu, T Takahashi, D Ohori, K Endo… - … status solidi (a), 2019 - Wiley Online Library
Herein, a successful elimination of the size‐dependent efficiency decrease in GaN micro‐
light‐emitting diodes (micro‐LEDs) is achieved using damage‐free neutral beam etching …