Abstract Cu (In, Ga) Se2 thin‐film solar cells have attracted significant research interest in
recent decades due to their high efficiency in converting solar energy into electricity for …

The present review gives an overview of the various reports on properties of line and planar
defects in Cu (In, Ga)(S, Se) 2 thin films for high‐efficiency solar cells. We report results from …

Summary The progress of Cu (In, Ga) S 2 remains significantly limited mainly due to
photovoltage (V oc) losses in the bulk and at the interfaces. Here, via a combination of …

Grain boundaries (GBs) are crucial for solar cells incorporating polycrystalline absorbers
and particularly for those characterized by small grain sizes (≈ 2 µm). For example, random …

We investigate the synthesis of kesterite Cu 2 ZnSnS 4 (CZTS) polycrystalline thin films
using cosputtering from binary sulfide targets followed by annealing in sulfur vapor at 500° C …

The emission of photoluminescence (PL) radiation is caused by the transition of electrons
from higher occupied electronic states into lower unoccupied states, under the emission of …

Polycrystalline materials are ubiquitous in technology, and grain boundaries have long been
known to affect materials properties and performance. First principles materials modeling …

Compared with the existent techniques, atom probe tomography is a unique technique able
to chemically characterize the internal interfaces at the nanoscale and in three dimensions …

In this study grain boundaries (GBs) and grain interiors in a sulfurized Cu (In, Ga)(S, Se) 2
(CIGSSe) photovoltaic thin film have been investigated by atom probe tomography. Grain …

Despite many recent research efforts, the influence of grain boundaries (GBs) on device
properties of CuIn1− xGaxSe2 solar cells is still not fully understood Here, we present a …