Electronic surface and dielectric interface states on GaN and AlGaN
GaN and AlGaN have shown great potential in next-generation high-power electronic
devices; however, they are plagued by a high density of interface states that affect device …
devices; however, they are plagued by a high density of interface states that affect device …
Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistors
Y Hori, Z Yatabe, T Hashizume - Journal of Applied Physics, 2013 - pubs.aip.org
We have investigated the relationship between improved electrical properties of Al 2 O
3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) …
3/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) …
Molecular beam epitaxy for high-performance Ga-face GaN electron devices
Molecular beam epitaxy (MBE) has emerged as a powerful technique for growing GaN-
based high electron mobility transistor (HEMT) epistructures. Over the past decade, HEMT …
based high electron mobility transistor (HEMT) epistructures. Over the past decade, HEMT …
On the origin of the two-dimensional electron gas at AlGaN/GaN heterojunctions and its influence on recessed-gate metal-insulator-semiconductor high electron …
It is commonly accepted that interface states at the passivation surface of AlGaN/GaN
heterostructures play an important role in the formation of the 2DEG density. Several …
heterostructures play an important role in the formation of the 2DEG density. Several …
[HTML][HTML] Effect of GaN surface treatment on Al2O3/n-GaN MOS capacitors
The surface preparation for depositing Al 2 O 3 for fabricating Au/Ni/Al 2 O 3/n-GaN (0001)
metal oxide semiconductor (MOS) capacitors was optimized as a step toward realization of …
metal oxide semiconductor (MOS) capacitors was optimized as a step toward realization of …
Interface trap characterization of atomic layer deposition Al2O3/GaN metal-insulator-semiconductor capacitors using optically and thermally based deep level …
Quantitative measurements of interface state density and energy distribution profiles within
Al 2 O 3/GaN interfaces were obtained by constant capacitance deep level transient …
Al 2 O 3/GaN interfaces were obtained by constant capacitance deep level transient …
Capacitance-voltage characterization of interfaces between positive valence band offset dielectrics and wide bandgap semiconductors
A photo-assisted capacitance voltage (CV) characterization technique for interfaces
between positive valence band offset dielectrics (Al 2 O 3, SiO 2) and wide bandgap …
between positive valence band offset dielectrics (Al 2 O 3, SiO 2) and wide bandgap …
Band-Bending of Ga-Polar GaN Interfaced with Al2O3 through Ultraviolet/Ozone Treatment
Understanding the band bending at the interface of GaN/dielectric under different surface
treatment conditions is critically important for device design, device performance, and device …
treatment conditions is critically important for device design, device performance, and device …
Fixed charge and trap states of in situ Al2O3 on Ga-face GaN metal-oxide-semiconductor capacitors grown by metalorganic chemical vapor deposition
In situ Al 2 O 3 on Ga-face GaN metal-oxide-semiconductor capacitors (MOSCAPs) were
grown by metalorganic chemical vapor deposition and measured using capacitance-voltage …
grown by metalorganic chemical vapor deposition and measured using capacitance-voltage …
Metalorganic chemical vapor deposition and characterization of (Al, Si) O dielectrics for GaN-based devices
In this paper, we report on the growth and electrical characterization of (Al, Si) O dielectrics
grown by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum …
grown by metalorganic chemical vapor deposition (MOCVD) using trimethylaluminum …