A 300-GHz-Band 40-Gb/s 2D phased-array CMOS transmitter with near-half-wave antenna pitch
K Takano, S Beppu, H Yagi, Y Sugimoto… - 2024 IEEE Radio …, 2024 - ieeexplore.ieee.org
The free-space wavelengths in the 300-GHz band are so short that it is extremely
challenging to realize phased arrays with a half-wave antenna pitch, required for preventing …
challenging to realize phased arrays with a half-wave antenna pitch, required for preventing …
Integrated electrical silicon interconnects for short-range high-speed millimeter-wave and terahertz communications
Millimeter-wave and terahertz interconnects implemented in advanced complementary
metal oxide semiconductor (CMOS) technologies have emerged as promising solutions to …
metal oxide semiconductor (CMOS) technologies have emerged as promising solutions to …
A 640-Gb/s 4 4-MIMO D-Band CMOS Transceiver Chipset
This work presents a D-band (110–170 GHz) CMOS transceiver (TRX) chipset that covers a
56-GHz (114–170 GHz) signal-chain bandwidth. Both the transmitter (TX) and the receiver …
56-GHz (114–170 GHz) signal-chain bandwidth. Both the transmitter (TX) and the receiver …
A Proton Irradiated CMOS On-Chip Vivaldi Antenna for 300 GHz Band Slat Array Implementation
As the CMOS transceiver reaches the sub-millimeter wave operating frequency, its circuit
area cannot keep up with the shrinkage of the area limit for the typical 2-dimensional (2D) …
area cannot keep up with the shrinkage of the area limit for the typical 2-dimensional (2D) …
Dual-Layer Proton Irradiation for Passive Component Enhancement and Noise Coupling Suppression on CMOS Process
This work presents the development of a dual-layer proton irradiation profile to decrease the
fluence required to create a thermally stable localized high-resistivity silicon (HR-Si) …
fluence required to create a thermally stable localized high-resistivity silicon (HR-Si) …
A D-Band Wideband Single-Ended Neutralized Up-Conversion Mixer with Controlled LO Feedthrough in 65nm CMOS
A D-band wideband passive single-ended upconversion mixer with controlled LO
feedthrough in 65-nm CMOS process is presented in this letter. The LO feedthrough was …
feedthrough in 65-nm CMOS process is presented in this letter. The LO feedthrough was …