The do** or the alteration of crystals with guest species to obtain desired properties has
long been a research frontier in materials science. However, the closely packed lattice …

The explosive growth of the information era has put forward urgent requirements for
ultrahigh‐speed and extremely efficient computations. In direct contrary to charge‐based …

The scaling of silicon metal–oxide–semiconductor field-effect transistors has followed
Moore's law for decades, but the physical thinning of silicon at sub-ten-nanometre …

Two-dimensional semiconductors can be used to build next-generation electronic devices
with ultrascaled channel lengths. However, semiconductors need to be integrated with high …

When electrons populate a flat band their kinetic energy becomes negligible, forcing them to
organize in exotic many-body states to minimize their Coulomb energy,,,–. The zeroth …

We demonstrate the fabrication of field-effect transistors based on single-layer MoS2 and a
thin layer of BaTiO3 (BTO) dielectric, isolated from its parent epitaxial template substrate …

Van der Waals heterostructures display numerous unique electronic properties. Nonlocal
measurements, wherein a voltage is measured at contacts placed far away from the …

The first isolation of graphene opens the avenue for new platforms for physics, electronic
engineering, and materials sciences. Among several kinds of synthesis approaches …

Electron interferometry with quantum Hall (QH) edge channels in semiconductor
heterostructures can probe and harness the exchange statistics of anyonic excitations …

Recent studies have intensively examined 2D materials (2DMs) as promising materials for
use in future quantum devices due to their atomic thinness. However, a major limitation …