Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Anti‐ambipolar heterojunctions: materials, devices, and circuits
Anti‐ambipolar heterojunctions are vital in constructing high‐frequency oscillators, fast
switches, and multivalued logic (MVL) devices, which hold promising potential for next …
switches, and multivalued logic (MVL) devices, which hold promising potential for next …
Silicon quantum electronics
This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …
Single-electron devices and their applications
KK Likharev - Proceedings of the IEEE, 1999 - ieeexplore.ieee.org
The goal of this paper is to review in brief the basic physics of single-election devices, as
well as their-current and prospective applications. These devices based on the controllable …
well as their-current and prospective applications. These devices based on the controllable …
Fabrication of single‐crystalline silicon nanowires by scratching a silicon surface with catalytic metal particles
A novel strategy for preparing large‐area, oriented silicon nanowire (SiNW) arrays on silicon
substrates at near room temperature by localized chemical etching is presented. The …
substrates at near room temperature by localized chemical etching is presented. The …
[PDF][PDF] Silicon single-electron quantum-dot transistor switch operating at room temperature
We fabricated a silicon single-electron quantum-dot transistor, which showed drain current
oscillations at room temperature. These oscillations are attributed to electron tunneling …
oscillations at room temperature. These oscillations are attributed to electron tunneling …
Silicon nanotubes
J Sha, J Niu, X Ma, J Xu, X Zhang, Q Yang… - Advanced …, 2002 - Wiley Online Library
The preparation of silicon nanotubes (SiNTs) using nanochannel Al2O3 as a template and a
chemical vapor deposition process is reported. The outer diameters of the SiNTs are around …
chemical vapor deposition process is reported. The outer diameters of the SiNTs are around …
Silicon-based low-dimensional nanomaterials and nanodevices
BK Teo, XH Sun - Chemical Reviews, 2007 - ACS Publications
Nanotechnology is a culmination of many facets of scientific and technological
developments in the nanorealm, including nanofabrication, nanomachineries, quantum …
developments in the nanorealm, including nanofabrication, nanomachineries, quantum …
A simple and novel route for the preparation of ZnO nanorods
C Xu, G Xu, Y Liu, G Wang - Solid State Communications, 2002 - Elsevier
Synthesis of zinc oxide (ZnO) nanorods was achieved by thermal decomposition of the
precursor of ZnC2O4 obtained via chemical reaction between Zn (CH3COO) 2· 2H2O and …
precursor of ZnC2O4 obtained via chemical reaction between Zn (CH3COO) 2· 2H2O and …
Investigation of individual CuO nanorods by polarized micro-Raman scattering
Rod-shaped CuO nanostructures were successfully synthesized by a one-step annealing
process in air using copper plates as starting material. Phase analysis was carried out using …
process in air using copper plates as starting material. Phase analysis was carried out using …
Preparation and characterization of CuO nanorods by thermal decomposition of CuC2O4 precursor
C Xu, Y Liu, G Xu, G Wang - Materials Research Bulletin, 2002 - Elsevier
Synthesis of copper oxide (CuO) nanorods was achieved by thermal decomposition of the
precursor of CuC2O4 obtained via chemical reaction between Cu (CH3COO) 2· H2O and …
precursor of CuC2O4 obtained via chemical reaction between Cu (CH3COO) 2· H2O and …