All-photonic integrated circuits are promising platforms for future systems beyond the
limitation of Moore's law. Over the last several decades, one-dimensional (1D) nanowires …

The discovery and continued development of the laser has revolutionized both science and
industry. The advent of miniaturized, semiconductor lasers has made this technology an …

Semiconductor nanowires, by definition, typically have cross-sectional dimensions that can
be tuned from 2–200 nm, with lengths spanning from hundreds of nanometres to millimetres …

Group-III-nitride semiconductors, including AlN, GaN, InN and their ternary, quaternary
compounds, are promising electronic and optoelectronic materials for the applications in …

▪ Abstract Semiconductor nanowires and nanotubes exhibit novel electronic and optical
properties owing to their unique structural one-dimensionality and possible quantum …

Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …

We report a new and general strategy for efficient injection of carriers in active nanophotonic
devices involving the synthesis of well-defined doped core/shell/shell (CSS) nanowire …

A range of nearly monodispersed NaYF4 single-crystal nanorods, hexagonal nanoplates,
and nanoparticles have been successfully prepared via a facile wet chemical technology …

ZnO and ZnS, well-known direct bandgap II–VI semiconductors, are promising materials for
photonic, optical, and electronic devices. Nanostructured materials have lent a leading edge …

The development of integrated electronic circuitry ranks among the most disruptive and
transformative technologies of the 20th century. Even though integrated circuits are …