Short-wavelength infrared light with a wavelength range of 1–3 µm is crucial in various fields
related to human activities. It has a better penetrating ability than visible light in harsh …

III–V nanowires (NWs) have been envisioned as nanoscale materials for next-generation
technology with good functionality, superior performance, high integration ability and low …

During the last decade, there has been a great deal of interest in TFETs. To the best authors'
knowledge, no book on TFETs currently exists. The proposed book provides readers with …

Complementary metal‐oxide‐semiconductor (CMOS) field‐effect transistors (FETs) are the
key component of a chip. Bulk indium arsenide (InAs) owns nearly 30 times higher electron …

One-dimensional InAs nanowires (NWs) have been widely researched in recent years.
Features of high mobility and narrow bandgap reveal its great potential of optoelectronic …

We present novel multifunctional nanocircuits built from nanowire transistors that uniquely
feature equal electron and hole conduction. Thereby, the mandatory requirement to yield …

Two-dimensional (2D) semiconductor materials with discrete bandgap become important
because of their interesting physical properties and potentials toward future nanoscale …

The surface Fermi level pinning effect promotes the formation of metal‐independent Ohmic
contacts for the high‐speed GaSb nanowires (NWs) electronic devices, however, it limits …

Infrared optoelectronic sensors have attracted considerable research interest over the past
few decades due to their wide-ranging applications in military, healthcare, environmental …

Antimonide semiconductors are suitable for low-power electronics and long-wavelength
optoelectronic applications. In recent years research on antimonide nanowires has become …