The rapid development of information technology has led to urgent requirements for high
efficiency and ultralow power consumption. In the past few decades, neuromorphic …

Metal oxides (MOs) are the most abundant materials in the Earth's crust and are ingredients
in traditional ceramics. MO semiconductors are strikingly different from conventional …

Emerging nonvolatile memory (eNVM) devices are pushing the limits of emerging
applications beyond the scope of silicon-based complementary metal oxide semiconductors …

This review addresses resistive switching devices operating according to the bipolar
valence change mechanism (VCM), which has become a major trend in electronic materials …

Transparent conducting oxides constitute a unique class of materials combining properties
of electrical conductivity and optical transparency in a single material. They are needed for a …

Resistive switching (RS) phenomena are reversible changes in the metastable resistance
state induced by external electric fields. After discovery∼ 50 years ago, RS phenomena …

In this paper, recent progress of binary metal–oxide resistive switching random access
memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical …

Numerous candidates attempting to replace Si-based flash memory have failed for a variety
of reasons over the years. Oxide-based resistance memory and the related memristor have …

Crossbar arrays based on two-terminal resistive switches have been proposed as a leading
candidate for future memory and logic applications. Here we demonstrate a high-density …

Abstract 1D metal‐oxide nanostructures have attracted much attention because metal
oxides are the most fascinating functional materials. The 1D morphologies can easily …