[HTML][HTML] A review of Ga2O3 materials, processing, and devices

SJ Pearton, J Yang, PH Cary, F Ren, J Kim… - Applied Physics …, 2018‏ - pubs.aip.org
Gallium oxide (Ga 2 O 3) is emerging as a viable candidate for certain classes of power
electronics, solar blind UV photodetectors, solar cells, and sensors with capabilities beyond …

Recent progress on the effects of impurities and defects on the properties of Ga 2 O 3

Y Wang, J Su, Z Lin, J Zhang, J Chang… - Journal of Materials …, 2022‏ - pubs.rsc.org
Ga2O3 is attractive for power devices and solar-blind ultraviolet photodetectors due to its
ultra-wide bandgap, large breakdown field, and favorable stability. However, it is difficult to …

Radiation damage effects in Ga 2 O 3 materials and devices

J Kim, SJ Pearton, C Fares, J Yang, F Ren… - Journal of Materials …, 2019‏ - pubs.rsc.org
The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation
hardness. Their suitability for space missions or military applications, where issues of …

Radiation damage in wide and ultra-wide bandgap semiconductors

SJ Pearton, A Aitkaliyeva, M **an, F Ren… - ECS Journal of Solid …, 2021‏ - iopscience.iop.org
The wide bandgap semiconductors SiC and GaN are already commercialized as power
devices that are used in the automotive, wireless, and industrial power markets, but their …

Ion implantation in β-Ga2O3: Physics and technology

A Nikolskaya, E Okulich, D Korolev… - Journal of Vacuum …, 2021‏ - pubs.aip.org
Gallium oxide, and in particular its thermodynamically stable β-Ga 2 O 3 phase, is within the
most exciting materials in research and technology nowadays due to its unique properties …

Diffusion of dopants and impurities in β-Ga2O3

R Sharma, ME Law, F Ren, AY Polyakov… - Journal of Vacuum …, 2021‏ - pubs.aip.org
The understanding and availability of quantitative measurements of the diffusion of dopants
and impurities in Ga 2 O 3 are currently at an early stage. In this work, we summarize what is …

[HTML][HTML] Transition from electron accumulation to depletion at β-Ga2O3 surfaces: The role of hydrogen and the charge neutrality level

JEN Swallow, JB Varley, LAH Jones, JT Gibbon… - APL Materials, 2019‏ - pubs.aip.org
The surface electronic properties of bulk-grown β-Ga 2 O 3 (⁠ 2 01⁠) single crystals are
investigated. The band gap is found using optical transmission to be 4.68 eV. High …

Interplay of vacancies, hydrogen, and electrical compensation in irradiated and annealed n-type β-Ga2O3

A Karjalainen, PM Weiser, I Makkonen… - Journal of Applied …, 2021‏ - pubs.aip.org
Positron annihilation spectroscopy, Fourier transform-infrared absorption spectroscopy, and
secondary ion mass spectrometry have been used to study the behavior of gallium vacancy …

[HTML][HTML] Impact of Hydrogen Plasma on Electrical Properties and Deep Trap Spectra in Ga2O3 Polymorphs

AY Polyakov, EB Yakimov, VI Nikolaev, AI Pechnikov… - Crystals, 2023‏ - mdpi.com
In this study, the results of hydrogen plasma treatments of β-Ga2O3, α-Ga2O3, κ-Ga2O3 and
γ-Ga2O3 polymorphs are analyzed. For all polymorphs, the results strongly suggest an …

Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals

VM Reinertsen, PM Weiser, YK Frodason… - Applied Physics …, 2020‏ - pubs.aip.org
The effect of lattice anisotropy on the diffusion of hydrogen (H)/deuterium (2 H) in β-Ga 2 O 3
was investigated using secondary ion mass spectrometry (SIMS) and hybrid-functional …