Challenges and opportunities for high-power and high-frequency AlGaN/GaN high-electron-mobility transistor (HEMT) applications: A review
The emergence of gallium nitride high-electron-mobility transistor (GaN HEMT) devices has
the potential to deliver high power and high frequency with performances surpassing …
the potential to deliver high power and high frequency with performances surpassing …
Performance enhancement of normally off InAlN/AlN/GaN HEMT using aluminium gallium nitride back barrier
In the present work, we have studied the influence of Aluminium Gallium Nitride (AlGaN)
back-barrier (BB) thickness on the direct current (DC) and short channel effects (SCEs) of …
back-barrier (BB) thickness on the direct current (DC) and short channel effects (SCEs) of …
High electron mobility transistor: physics-based TCAD simulation and performance analysis
Abstract High Electron Mobility Transistor (HEMT) attained great interest because of its
superior electron transport making it suitable for applications in high-speed circuits and high …
superior electron transport making it suitable for applications in high-speed circuits and high …
Comparative study on analog & RF parameter of InALN/AlN/GaN normally off HEMTs with and without AlGAN back barrier
In this work, we have made a relative assessment of lattice-matched In 0.17 Al 0.83
N/AlN/GaN normally off HEMT device with AlGaN back-barrier (BB) and without back-barrier …
N/AlN/GaN normally off HEMT device with AlGaN back-barrier (BB) and without back-barrier …
Investigation of DC & RF/Analog performance of AlGaN/AlN/GaN MOSHEMT for different back barrier
In this work, the authors have presented the effect of different back barriers on DC and
analog/RF performances of AlGaN/AlN/GaN metal oxide semiconductor high electron …
analog/RF performances of AlGaN/AlN/GaN metal oxide semiconductor high electron …