Structure, properties and applications of two‐dimensional hexagonal boron nitride
Hexagonal boron nitride (h‐BN) has emerged as a strong candidate for two‐dimensional
(2D) material owing to its exciting optoelectrical properties combined with mechanical …
(2D) material owing to its exciting optoelectrical properties combined with mechanical …
Mixed sp2–sp3 Nanocarbon Materials: A Status Quo Review
J Vejpravová - Nanomaterials, 2021 - mdpi.com
Carbon nanomaterials with a different character of the chemical bond—graphene (sp2) and
nanodiamond (sp3)—are the building bricks for a new class of all-carbon hybrid …
nanodiamond (sp3)—are the building bricks for a new class of all-carbon hybrid …
[HTML][HTML] Ultrawide bandgap semiconductors
Ultrawide bandgap (UWBG) semiconductors, with energy bandgaps (> 4 eV), much wider
than the conventional wide bandgap (WBG) of GaN (3.4 eV) and SiC (3.2 eV), represent an …
than the conventional wide bandgap (WBG) of GaN (3.4 eV) and SiC (3.2 eV), represent an …
In situ interface engineering of highly nitrogen-rich triazine-based covalent organic frameworks for an ultra-stable, dendrite-free lithium-metal anode
Uncontrollable dendrite growth and a lack of safety and reliability in lithium-metal batteries
(LMBs) severely restrict their commercial progress; therefore, designing highly safe and …
(LMBs) severely restrict their commercial progress; therefore, designing highly safe and …
Electronic band offset in a diamond| cBN| diamond system for modulation do**
Diamond is a material with promising electronics applications but with challenges in
effective do**. Cubic boron nitride (cBN), due to its similar lattice structure, is ideal for …
effective do**. Cubic boron nitride (cBN), due to its similar lattice structure, is ideal for …
[HTML][HTML] Oxidative etching mechanism of the diamond (100) surface
We performed density functional theory calculations with van der Waals corrections to
elucidate diamond oxidation mechanism on the atomic-level which could lead to insights …
elucidate diamond oxidation mechanism on the atomic-level which could lead to insights …
A review of diamond materials and applications in power semiconductor devices
F Zhao, Y He, B Huang, T Zhang, H Zhu - Materials, 2024 - pmc.ncbi.nlm.nih.gov
Diamond is known as the ultimate semiconductor material for electric devices with excellent
properties such as an ultra-wide bandgap (5.47 eV), high carrier mobility (electron mobility …
properties such as an ultra-wide bandgap (5.47 eV), high carrier mobility (electron mobility …
Unidirectional domain growth of hexagonal boron nitride thin films
Two-dimensional van der Waals (2D-vdW) layered hexagonal boron nitride (h-BN) has
gained tremendous research interest over recent years due to its unconventional domain …
gained tremendous research interest over recent years due to its unconventional domain …
Theoretical study of the interface engineering for H-diamond field effect transistors with h-BN gate dielectric and graphite gate
Diamond has compelling advantages in power devices as an ultrawide-bandgap
semiconductor. Using first-principles calculations, we systematically investigate the …
semiconductor. Using first-principles calculations, we systematically investigate the …
First-principles investigation of oxidized Si-and Ge-terminated diamond (100) surfaces
Diamond is a semiconductor material with remarkable structural, thermal, and electronic
properties that has garnered significant interest in the field of electronics. Although hydrogen …
properties that has garnered significant interest in the field of electronics. Although hydrogen …