Silicon has enabled the rise of the semiconductor electronics industry, but it was not the first
material used in such devices. During the 1950s, just after the birth of the transistor, solid …

Metal-oxide-semiconductor field-effect transistors (MOSFETs) have shown impressive
performance improvements over the past 10 years by incorporating strained silicon (Si) …

In this article, we investigate electrical transport properties in ultrathin body (UTB) MoS2 two-
dimensional (2D) crystals with channel lengths ranging from 2 μm down to 50 nm. We …

The Schottky barrier height in metal/Ge contacts shows weak dependence on the metal work
function indicating strong Fermi-level pinning close to the Bardeen limit. The pinning factor S …

The use of atomic layer deposition (ALD) to form a semicon ductor structure of a silicon film
on a germanium Substrate is disclosed. An embodiment includes a tantalum nitride gate …

n-and p-type Ge nanowires were synthesized by a multistep process in which axial
elongation, via vapor–liquid–solid (VLS) growth, and do** were accomplished in separate …

The monolithic integration of germanium-on-insulator (GeOI) p-MOSFETs with silicon n-
MOSFETs on a silicon substrate is demonstrated. The GeOI p-MOSFETs are fabricated on …

The performance of strained silicon (Si) as the channel material for today's metal-oxide-
semiconductor field-effect transistors may be reaching a plateau. New channel materials …

Germanium possesses higher electron and hole mobilities than silicon. There is a big leap,
however, between these basic material parameters and implementation for high …

With the increasing use of optical fibers in telecommunications, the demand for efficient
photodetectors operating in the low loss windows 1.3–1.6 m of silica fibers is growing …