Germanium (Ge) has played a key role in silicon photonics as an enabling material for
datacom applications. Indeed, the unique properties of Ge have been leveraged to develop …

Silicon photonics research can be dated back to the 1980s. However, the previous decade
has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology …

Monolithically integrated, active photonic devices on Si are key components in Si-based
large-scale electronic-photonic integration for future generations of high-performance, low …

Efficient coupling to integrated high-quality-factor cavities is crucial for the employment of
germanium quantum dot (QD) emitters in future monolithic silicon-based optoelectronic …

Silicon photonics for synergistic electronic–photonic integration has achieved remarkable
progress in the past two decades. Active photonic devices, including lasers, modulators, and …

Germanium/Silicon-Germanium (Ge/SiGe) multiple quantum wells receive great attention for
the realization of Si-based optical modulators, photodetectors, and light emitters for short …

As recently demonstrated, defect-enhanced Ge quantum dots (Ge-DEQDs) in a crystalline Si
matrix can be employed as CMOS-compatible gain material in optically pumped lasers. Due …

60Gb/s waveguide-coupled O-band GeSi quantum-confined Stark effect electro-absorption
modulator Page 1 60Gb/s waveguide-coupled O-band GeSi quantum-confined Stark effect …

Strained germanium nanowires have recently become an important material of choice for
silicon-compatible optoelectronic devices. While the indirect bandgap nature of germanium …

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these
materials still demand research, eminently in view of the improvement of knowledge on …