Displacement damage effects in irradiated semiconductor devices
JR Srour, JW Palko - IEEE Transactions on Nuclear Science, 2013 - ieeexplore.ieee.org
A review of radiation-induced displacement damage effects in semiconductor devices is
presented, with emphasis placed on silicon technology. The history of displacement damage …
presented, with emphasis placed on silicon technology. The history of displacement damage …
Design and characterization of a p+/n-well SPAD array in 150nm CMOS process
This paper reports on characterization results of a single-photon avalanche diode (SPAD)
array in standard CMOS 150nm technology. The array is composed by 25 (5× 5) SPADs …
array in standard CMOS 150nm technology. The array is composed by 25 (5× 5) SPADs …
[LIBRO][B] Fundamentals of CMOS single-photon avalanche diodes
MW Fishburn - 2012 - books.google.com
Page 1 Fundamentals of CMOS Single-Photon Avalanche Diodes Matthew W. Fishburn G Page
2 Fundamentals of CMOS Single-Photon Avalanche Diodes PROEFSCHRIFT ter verkrijging …
2 Fundamentals of CMOS Single-Photon Avalanche Diodes PROEFSCHRIFT ter verkrijging …
Calibration of free-space and fiber-coupled single-photon detectors
We measure the detection efficiency of single-photon detectors at wavelengths near 851 nm
and 1533.6 nm. We investigate the spatial uniformity of one free-space-coupled single …
and 1533.6 nm. We investigate the spatial uniformity of one free-space-coupled single …
Random Telegraph Signal in n+/p-Well CMOS Single-Photon Avalanche Diodes
In this article, in addition to two commonly known noise parameters—dark count rate (DCR)
and afterpulsing (AP)—we explore another interesting phenomenon–random telegraph …
and afterpulsing (AP)—we explore another interesting phenomenon–random telegraph …
Proton induced dark count rate degradation in 150-nm CMOS single-photon avalanche diodes
M Campajola, F Di Capua, D Fiore, E Sarnelli… - Nuclear Instruments and …, 2019 - Elsevier
Proton irradiation effects on a Single-Photon Avalanche Diodes (SPADs) device
manufactured using a 150-nm CMOS process are presented. An irradiation campaign has …
manufactured using a 150-nm CMOS process are presented. An irradiation campaign has …
Random telegraph signal in proton irradiated single-photon avalanche diodes
F Di Capua, M Campajola, L Campajola… - … on Nuclear Science, 2018 - ieeexplore.ieee.org
Single-photon avalanche diodes (SPADs) in the CMOS technology are very attractive
solution for photon detection due to the excellent timing resolution achievable …
solution for photon detection due to the excellent timing resolution achievable …
Counting statistics of actively quenched SPADs under continuous illumination
This work presents stochastic approaches to model the counting behavior of actively
quenched single-photon avalanche diodes (SPADs) subjected to continuous-wave constant …
quenched single-photon avalanche diodes (SPADs) subjected to continuous-wave constant …
Automatic Detection and Correction of Random Telegraph Signal Artifacts in Earth Observation Images
Satellite optical and infrared images can be degraded by a piecewise-constant random
artifact called random telegraph signal (RTS), which is caused by unstable semiconductor …
artifact called random telegraph signal (RTS), which is caused by unstable semiconductor …
Evaluation of an operational concept for improving radiation tolerance of single-photon avalanche diode (SPAD) arrays
JA Smith, VH Dhulla, SS Mukherjee… - … on Nuclear Science, 2020 - ieeexplore.ieee.org
Silicon (Si) single-photon avalanche diode (SPAD) arrays sensitive to the 400to 900-nm
wavelength range have been studied for a number of uses due to their high detection …
wavelength range have been studied for a number of uses due to their high detection …