High-throughput quantum photonic devices emitting indistinguishable photons in the telecom C-band
Single indistinguishable photons at telecom C-band wavelengths are essential for quantum
networks and the future quantum internet. However, high-throughput technology for single …
networks and the future quantum internet. However, high-throughput technology for single …
Bright quantum dot single-photon emitters at telecom bands heterogeneously integrated on Si
Whereas the Si photonic platform is highly attractive for scalable optical quantum information
processing, it lacks practical solutions for efficient photon generation. Self-assembled …
processing, it lacks practical solutions for efficient photon generation. Self-assembled …
Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: morphology, optical and electronic properties
The rapidly develo** quantum communication technology requires deterministic quantum
emitters that can generate single photons and entangled photon pairs in the third telecom …
emitters that can generate single photons and entangled photon pairs in the third telecom …
Xenon plasma-focused ion beam milling for fabrication of high-purity, bright single-photon sources operating in the C-band
M Jaworski, P Mrowiński, MG Mikulicz, P Holewa… - Optics …, 2024 - opg.optica.org
Electron beam lithography is a standard method for fabricating photonic micro and
nanostructures around semiconductor quantum dots (QDs), which are crucial for efficient …
nanostructures around semiconductor quantum dots (QDs), which are crucial for efficient …
Near-critical Stranski-Krastanov growth of InAs/InP quantum dots
This work shows how to control the surface density and size of InAs/InP quantum dots over a
wide range by tailoring the conditions of Stranski-Krastanov growth. We demonstrate that in …
wide range by tailoring the conditions of Stranski-Krastanov growth. We demonstrate that in …
Telecom Wavelengths InP‐Based Quantum Dots for Quantum Communication
Quantum dots (QDs), also known as artificial atoms, are among the recently explored
hardware platforms for photonic quantum technologies. They offer a range of advantages …
hardware platforms for photonic quantum technologies. They offer a range of advantages …
Atypical dependence of excited exciton energy levels and electron-hole correlation on emission energy in pyramidal InP-based quantum dots
M Gawełczyk - Scientific Reports, 2022 - nature.com
We calculate the spectrum of excited exciton states in application-relevant self-assembled
pyramidal quantum dots grown in InAs/InP and InAs/AlGaInAs material systems. These types …
pyramidal quantum dots grown in InAs/InP and InAs/AlGaInAs material systems. These types …
Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs (111) Metamorphic Substrates
We investigate in detail the role of strain relaxation and cap** overgrowth in the self-
assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In …
assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In …
Electronic and optical properties of InAs QDs grown by MBE on InGaAs metamorphic buffer
We present the optical characterization of GaAs-based InAs quantum dots (QDs) grown by
molecular beam epitaxy on a digitally alloyed InGaAs metamorphic buffer layer (MBL) with …
molecular beam epitaxy on a digitally alloyed InGaAs metamorphic buffer layer (MBL) with …
Optical quality of InAs/InP quantum dots on distributed Bragg reflector emitting at 3rd telecom window grown by molecular beam epitaxy
T Smołka, K Posmyk, M Wasiluk, P Wyborski… - Materials, 2021 - mdpi.com
We present an experimental study on the optical quality of InAs/InP quantum dots (QDs).
Investigated structures have application relevance due to emission in the 3rd …
Investigated structures have application relevance due to emission in the 3rd …