Advancements in AI led to the emergence of in-memory-computing architectures as a
promising solution for the associated computing and memory challenges. This study …

The future computing beyond von Neumann era relies heavily on emerging devices that can
extensively harness material and device physics to bring novel functionalities and can …

In this invited article we present a comprehensive overview of 28 nm high-k-metal gate-
based ferroelectric field effect transistor devices for synaptic applications. The devices under …

Indium gallium zinc oxide (IGZO)-based ferroelectric thin-film transistors (FeTFTs) are being
vigorously investigated for being deployed in computing-in-memory (CIM) applications …

In today's data-centric world, where data fuels numerous application domains, with machine
learning at the forefront, handling the enormous volume of data efficiently in terms of time …

This letter proposes a memory cell, denoted by 1F-1 T, consisting of a ferroelectric field-
effect transistor (FeFET) cascaded with another current-limiting transistor (T). The transistor …

This study proposes a novel low-frequency noise (LFN) measurement method to investigate
the origin of threshold voltage (instability in junctionless ferroelectric field-effect transistors …

Harnessing multibit precision in nonvolatile memory (NVM)‐based synaptic core can
accelerate multiply and accumulate (MAC) operation of deep neural network (DNN) …

In this paper we discuss the current research status of ferroelectric memory solutions and
reflect it with application requirements. In focus are mainly three promising emerging …

Hafnium oxide (HfO2)‐based ferroelectric field effect transistors (FeFETs) revolutionize the
emerging nonvolatile memory area, especially with the potential to replace flash memories …