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Gate oxides beyond SiO2
This year marks a major materials milestone in the makeup of silicon-based field-effect
transistors: in the microprocessors produced by leading manufacturers, the SiO2 gate …
transistors: in the microprocessors produced by leading manufacturers, the SiO2 gate …
Thin-film transistor and ultra-large scale integrated circuit: Competition or collaboration
Thin-film transistor (TFT) and ultra-large scale integrated circuit (ULSIC) have been
compared and discussed with respect to the development history, technology trends, and …
compared and discussed with respect to the development history, technology trends, and …
Diffusion and interface growth in hafnium oxide and silicate ultrathin films on Si (001)
Medium energy ion scattering has been used in combination with O 16 and O 18 isotope
tracing to determine elemental depth distributions and elucidate oxygen transport in 2–5 nm …
tracing to determine elemental depth distributions and elucidate oxygen transport in 2–5 nm …
Impact of precursor chemistry and process conditions on the scalability of ALD HfO2 gate dielectrics
The downscaling of high-/metal gate transistor devices requires thin-film deposition
processes that deliver not only an outstanding high-oxide quality, but also a strict interfacial …
processes that deliver not only an outstanding high-oxide quality, but also a strict interfacial …
Oxygen diffusion and reactions in Hf-based dielectrics
Oxygen transport in and reactions with thin hafnium oxide and hafnium silicate films have
been investigated using medium energy ion scattering in combination with O 2 18 isotopic …
been investigated using medium energy ion scattering in combination with O 2 18 isotopic …
Effects of post–deposition annealing on the material characteristics of ultrathin HfO2 films on silicon
High quality HfO 2 films were deposited on p-type Si (100) wafers by an atomic layer
deposition scheme. The deposited films were smooth, amorphous, and stoichiometric, as …
deposition scheme. The deposited films were smooth, amorphous, and stoichiometric, as …
Ultrascaled hafnium silicon oxynitride gate dielectrics with excellent carrier mobility and reliability
A hafnium silicon oxynitride gate dielectric with a universal channel mobility of∼ 90% at 1
MV∕ cm, equivalent oxide thickness of approximately 1 nm, and leakage current 200× …
MV∕ cm, equivalent oxide thickness of approximately 1 nm, and leakage current 200× …
Comparison of electrical and chemical characteristics of ultrathin HfON versus HfSiON dielectrics
The electrical and chemical properties of ultrathin HfON and HfSiON gate dielectrics are
investigated as a function of physical thickness. Grazing incidence x-ray diffraction was used …
investigated as a function of physical thickness. Grazing incidence x-ray diffraction was used …
High performance gate first HfSiON dielectric satisfying 45nm node requirements
We show an ALD based HfSiON gate dielectric scaled to 1 nm EOT with excellent
performance and reliability. Furthermore, the HfSiON dielectric films are integrated in a gate …
performance and reliability. Furthermore, the HfSiON dielectric films are integrated in a gate …
Breakdown phenomena of zirconium-doped hafnium oxide high-k stack with an inserted interface layer
Two-step breakdown is observed on a zirconium-doped hafnium oxide film with a hafnium
silicate interface layer. The high-k stack has an equivalent oxide thickness of∼ 1.7 nm. It is …
silicate interface layer. The high-k stack has an equivalent oxide thickness of∼ 1.7 nm. It is …