2D heterostructures for ubiquitous electronics and optoelectronics: principles, opportunities, and challenges

PV Pham, SC Bodepudi, K Shehzad, Y Liu, Y Xu… - Chemical …, 2022 - ACS Publications
A grand family of two-dimensional (2D) materials and their heterostructures have been
discovered through the extensive experimental and theoretical efforts of chemists, material …

Van der Waals contact for two-dimensional transition metal dichalcogenides

L Ma, Y Wang, Y Liu - Chemical Reviews, 2024 - ACS Publications
Two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as highly
promising candidates for next-generation electronics owing to their atomically thin structures …

Silicon/2D-material photodetectors: from near-infrared to mid-infrared

C Liu, J Guo, L Yu, J Li, M Zhang, H Li, Y Shi… - Light: Science & …, 2021 - nature.com
Abstract Two-dimensional materials (2DMs) have been used widely in constructing
photodetectors (PDs) because of their advantages in flexible integration and ultrabroad …

Photodetectors based on two‐dimensional layered materials beyond graphene

C **e, C Mak, X Tao, F Yan - Advanced Functional Materials, 2017 - Wiley Online Library
Following a significant number of graphene studies, other two‐dimensional (2D) layered
materials have attracted more and more interest for their unique structures and distinct …

Group 6 transition metal dichalcogenide nanomaterials: synthesis, applications and future perspectives

M Samadi, N Sarikhani, M Zirak, H Zhang… - Nanoscale …, 2018 - pubs.rsc.org
Group 6 transition metal dichalcogenides (G6-TMDs), most notably MoS2, MoSe2, MoTe2,
WS2 and WSe2, constitute an important class of materials with a layered crystal structure …

2D layered material‐based van der Waals heterostructures for optoelectronics

X Zhou, X Hu, J Yu, S Liu, Z Shu… - Advanced Functional …, 2018 - Wiley Online Library
Van der Waals heterostructures (vdWHs) based on 2D layered materials with selectable
materials properties pave the way to integration at the atomic scale, which may give rise to …

Band alignment engineering in two‐dimensional transition metal dichalcogenide‐based heterostructures for photodetectors

R Liu, F Wang, L Liu, X He, J Chen, Y Li… - Small Structures, 2021 - Wiley Online Library
The hybridization of two‐dimensional transition metal dichalcogenides (2D TMDs) with other
light‐sensitive materials to fabricate the TMD‐based heterostructures is an effective way to …

Augmented photovoltaic performance of Cu/Ce-(Sn: Cd)/n-Si Schottky barrier diode utilizing dual-doped Ce-(Sn: Cd) thin films

T Akila, P Gayathri, GA Sibu, V Balasubramani… - Optical Materials, 2024 - Elsevier
In the current investigation, we are fabricated the Schottky barrier diode (SBDs) formed on
dual doped Ce-(Sn: Cd)(1, 3 and 5 wt%) thin films. The film was prepared by spray pyrolysis …

Towards n-type conductivity in hexagonal boron nitride

S Lu, P Shen, H Zhang, G Liu, B Guo, Y Cai… - Nature …, 2022 - nature.com
Asymmetric transport characteristic in n-and p-type conductivity has long been a
fundamental difficulty in wide bandgap semiconductors. Hexagonal boron nitride (h-BN) can …

Graphene/semiconductor hybrid heterostructures for optoelectronic device applications

C **e, Y Wang, ZX Zhang, D Wang, LB Luo - Nano Today, 2018 - Elsevier
As one of the most appealing two-dimensional materials, graphene (Gr) has attracted
tremendous research interest in optoelectronic device applications for its plenty of …