Due to the brittleness of silicon, the use of a diamond wire to cut silicon wafers is a critical
stage in solar cell manufacturing. In order to improve the production yield of the cutting …

Three-dimensional (3D) packaging using through-Si-via (TSV) is a key technique for
achieving high-density integration, high-speed connectivity, and for downsizing of electronic …

Accurate and fast breath monitoring is of great importance for various healthcare
applications, for example, medical diagnoses, studying sleep apnea, and early detection of …

A novel property existing in the stain-etching technique that eliminates the need for
expensive etchant masks in the texturization process of silicon wafers was identified …

Here, we report deep metal-assisted chemical etching (MACE) using a porous monolithic
AgAu layer on crystalline silicon (c-Si) as an alternative to the expensive deep reactive ion …

This study investigates the electron field emission (EFE) of vertical silicon nanowires (Si
NWs) fabricated on n-type Si (100) and p-type Si (100) substrates using catalyst-induced …

Achieving precise and cost-effective etching in the field of silicon three-dimensional (3D)
structure fabrication remains a significant challenge. Here, we present the successful …

Abstract The Shockley-Queisser limit poses a significant challenge in solar technology
research, limiting the theoretical efficiency to around 30%. Thermophotovoltaic (TPV) …

The electrons transfer and holes injection behaviors have an important effect on the silicon
chemical etching, but how they affect metal-assisted chemical etching (MACE) of silicon is …

We have studied the mc-Si wafers with different (hkl) planes. Initially, the wafer was
chemically etched by the KOH (20wt%) and IPA (2%) in the Millipore water at 60° C for 20 …