The role of arsenic in the operation of sulfur-based electrical threshold switches

R Wu, R Gu, T Gotoh, Z Zhao, Y Sun, S Jia… - Nature …, 2023‏ - nature.com
Arsenic is an essential dopant in conventional silicon-based semiconductors and emerging
phase-change memory (PCM), yet the detailed functional mechanism is still lacking in the …

Ultrahigh drive current and large selectivity in GeS selector

S Jia, H Li, T Gotoh, C Longeaud, B Zhang… - Nature …, 2020‏ - nature.com
Selector devices are indispensable components of large-scale nonvolatile memory and
neuromorphic array systems. Besides the conventional silicon transistor, two-terminal ovonic …

Self-rectifying memory cell based on SiGeAsSe ovonic threshold switch

T Ravsher, D Garbin, A Fantini… - … on Electron Devices, 2023‏ - ieeexplore.ieee.org
Cross-point array architecture offers a path toward low-cost storage-class memory (SCM).
However, it requires a selector, such as an ovonic threshold switch (OTS) in series with the …

Understanding switching mechanism of selector-only memory using Se-based ovonic threshold switch device

J Lee, Y Seo, S Ban, DG Kim, YB Park… - … on Electron Devices, 2024‏ - ieeexplore.ieee.org
In this study, we investigated the effect of material composition on the selector-only memory
(SOM) characteristics of ovonic threshold switch (OTS) device. By controlling the selenium …

Performance Improvement of GeTex-Based Ovonic Threshold Switching Selector by C Do**

L Wang, W Cai, D He, Q Lin, D Wan… - IEEE Electron Device …, 2021‏ - ieeexplore.ieee.org
In this letter, we fabricated a C-doped GeTe x Ovonic threshold switching (OTS) selector in a
via-hole structure. The material composition is simple without toxic element do** …

Composition optimization and device understanding of Si-Ge-As-Te ovonic threshold switch selector with excellent endurance

D Garbin, W Devulder, R Degraeve… - 2019 IEEE …, 2019‏ - ieeexplore.ieee.org
In this work we explore the composition space of the Ovonic Threshold Switch (OTS)
selector device based on Si-Ge-As-Te material system. Physical Vapor Deposition (PVD) co …

Electronic Excitation-Induced Semiconductor-Metal Transitions Enabling Ovonic Threshold Switching in Boron Telluride Glasses

H Liu, H Gong, K Liu, K Ding, J Chen, Z Liu… - Chemistry of …, 2023‏ - ACS Publications
Ovonic threshold switching in chalcogenide glasses is a crucial physical phenomenon
behind state-of-the-art memory chip technologies. Binary tellurides are one of the emerging …

Understanding of forming and switching mechanism using trap distribution model for ovonic threshold switch device

S Lee, J Lee, M Kwak, O Mosendz, H Hwang - Applied Physics Letters, 2021‏ - pubs.aip.org
In this study, we investigate the electrical characteristics of a W/Si–Te–As–Ge/W ovonic
threshold switch (OTS) under various conditions to reveal the origin of its forming and its …

Reliable low voltage selector device technology based on robust SiNGeCTe arsenic-free chalcogenide

E Ambrosi, CH Wu, HY Lee, CM Lee… - IEEE Electron …, 2022‏ - ieeexplore.ieee.org
Modern data-centric computing applications are increasingly demanding in terms of memory
density and performance. The cross-point memory architecture based on the two-terminal …

GeSe-based ovonic threshold switching volatile true random number generator

Z Chai, W Shao, W Zhang, J Brown… - IEEE Electron …, 2019‏ - ieeexplore.ieee.org
In this paper, we propose and demonstrate a novel technique for true random number
generator (TRNG) application using GeSe-based Ovonic threshold switching (OTS) selector …