Recent advances in optoelectronic and microelectronic devices based on ultrawide-bandgap semiconductors
J Yang, K Liu, X Chen, D Shen - Progress in Quantum Electronics, 2022 - Elsevier
Owing to their novel physical properties, semiconductors have penetrated almost every
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
corner of the contemporary industrial system. Nowadays, semiconductor materials and their …
Application of patterned sapphire substrate for III-nitride light-emitting diodes
Recent decades have witnessed flourishing prosperity of III-nitride emitters in solid-state
lighting and high-resolution displays. As one of the widely used substrates, sapphire shows …
lighting and high-resolution displays. As one of the widely used substrates, sapphire shows …
Compositionally graded III-nitride alloys: Building blocks for efficient ultraviolet optoelectronics and power electronics
Wide bandgap aluminum gallium nitride (AlGaN) semiconductor alloys have established
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
AlGaN-based deep ultraviolet micro-LED emitting at 275 nm
The investigation of electrical and optical properties of micro-scale AlGaN deep ultraviolet
(DUV) light-emitting diodes (LEDs) emitting at∼ 275nm was carried out, with an emphasis …
(DUV) light-emitting diodes (LEDs) emitting at∼ 275nm was carried out, with an emphasis …
Boosted ultraviolet electroluminescence of InGaN/AlGaN quantum structures grown on high-index contrast patterned sapphire with silica array
Epitaxially grown high crystalline quality InGaN/AlGaN multiple quantum structures on
patterned sapphire with silica array (PSSA) have been successfully demonstrated. In …
patterned sapphire with silica array (PSSA) have been successfully demonstrated. In …
Achieving 9.6% efficiency in 304 nm p-AlGaN UVB LED via increasing the holes injection and light reflectance
MA Khan, N Maeda, J Yun, M Jo, Y Yamada… - Scientific reports, 2022 - nature.com
Crystal growth of eco-friendly, ultrawide bandgap aluminium gallium nitride (AlGaN)
semiconductor-based ultraviolet-B (UVB) light-emitting diodes (LEDs) hold the potential to …
semiconductor-based ultraviolet-B (UVB) light-emitting diodes (LEDs) hold the potential to …
Demonstration of AlGaN/GaN-based ultraviolet phototransistor with a record high responsivity over 3.6× 107 A/W
In this work, we demonstrate a high-performance ultraviolet phototransistor (UVPT) based
on the AlGaN/GaN high-electron mobility transistor (HEMT) configuration. When the device …
on the AlGaN/GaN high-electron mobility transistor (HEMT) configuration. When the device …
Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system
Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
Band engineering of III-nitride-based deep-ultraviolet light-emitting diodes: a review
III-nitride deep ultraviolet (DUV) light-emitting diodes (LEDs) have been identified as
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
promising candidates for energy-efficient, environment-friendly and robust UV lighting …
Perspectives on UVC LED: Its progress and application
TC Hsu, YT Teng, YW Yeh, X Fan, KH Chu, SH Lin… - Photonics, 2021 - mdpi.com
High-quality epitaxial layers are directly related to internal quantum efficiency. The methods
used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light …
used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light …