The value of efficiency in photovoltaics
Herein, we introduce the value of efficiency (VOE)—a metric defining the allowable cost for
innovation by analyzing the co-dependence of levelized cost of electricity (LCOE) on …
innovation by analyzing the co-dependence of levelized cost of electricity (LCOE) on …
Chemical bonding at room temperature via surface activation to fabricate low-resistance GaAs/Si heterointerfaces
Y Ohno, J Liang, N Shigekawa, H Yoshida… - Applied Surface …, 2020 - Elsevier
Bonding mechanism at room temperature (RT) in GaAs/Si heterointerfaces fabricated by
surface-activated bonding (SAB) is examined using cross-sectional scanning transmission …
surface-activated bonding (SAB) is examined using cross-sectional scanning transmission …
First-principles study of optoelectronic and thermoelectronic properties of the ScAgC half-Heusler compound
In this paper, we have presented a theoretical study in the context of photovoltaic (PV) and
thermoelectric (TE) applications of ScAgC. The electronic, optical, and thermoelectric …
thermoelectric (TE) applications of ScAgC. The electronic, optical, and thermoelectric …
Fabrication and characterization of single junction GaAs solar cells on Si with As-doped Ge buffer
A single junction gallium arsenide (GaAs) solar cell on silicon (Si) substrate with energy
conversion efficiency of 11.88% under the AM1. 5 G spectrum at 1 sun intensity without an …
conversion efficiency of 11.88% under the AM1. 5 G spectrum at 1 sun intensity without an …
Reliable prediction of new quantum materials for topological and renewable-energy applications: a high-throughput screening
Half-Heusler (HH) alloys provide a general platform for searching candidate materials for
various energy applications. Here, we present a high-throughput first-principles calculation …
various energy applications. Here, we present a high-throughput first-principles calculation …
GaAs/indium tin oxide/Si bonding junctions for III-V-on-Si hybrid multijunction cells with low series resistance
N Shigekawa, T Hara, T Ogawa, J Liang… - IEEE Journal of …, 2018 - ieeexplore.ieee.org
Effects of GaAs/indium tin oxide (ITO)/Si junctions on III-V-on-Si multijunction solar cells are
examined by fabricating and characterizing InGaP/GaAs/ITO/Si triple-junction (3J) solar …
examined by fabricating and characterizing InGaP/GaAs/ITO/Si triple-junction (3J) solar …
Intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated bonding at room temperature
Y Ohno, H Yoshida, S Takeda, J Liang… - Japanese Journal of …, 2017 - iopscience.iop.org
The intrinsic microstructure of Si/GaAs heterointerfaces fabricated by surface-activated
bonding at room temperature is examined by plane-view transmission electron microscopy …
bonding at room temperature is examined by plane-view transmission electron microscopy …
Predicting the outdoor performance of flat-plate III–V/Si tandem solar cells
In this work, we use a systematic way to calculate and analyze the outdoor performance of
flat-plate III–V/Si tandem solar cells, which are promising candidates for next generation 1 …
flat-plate III–V/Si tandem solar cells, which are promising candidates for next generation 1 …
Efficiency evaluation for triple-junction solar cells in five tandem configurations
L Zhang, M Chen, S Luo, GG Qin - Renewable energy, 2018 - Elsevier
For triple-junction solar cells (3J SCs), five tandem configurations have been successively
put forward, including two-terminal serial, six-terminal, parallel/serial, bottom-cell …
put forward, including two-terminal serial, six-terminal, parallel/serial, bottom-cell …
Bridging the gap between photovoltaics R&D and manufacturing with data-driven optimization
Novel photovoltaics, such as perovskites and perovskite-inspired materials, have shown
great promise due to high efficiency and potentially low manufacturing cost. So far, solar cell …
great promise due to high efficiency and potentially low manufacturing cost. So far, solar cell …