The semiconductor ZnO has gained substantial interest in the research community in part
because of its large exciton binding energy (60 meV) which could lead to lasing action …

We review the physical properties of diluted magnetic semiconductors (DMS) of the type
AII1− x Mn x BVI (eg, Cd1− x Mn x Se, Hg1− x Mn x Te). Crystallographic properties are …

Ferromagnetism in manganese compound semiconductors not only opens prospects for
tailoring magnetic and spin-related phenomena in semiconductors with a precision specific …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

A mean-field model of ferromagnetism mediated by delocalized or weakly localized holes in
zinc-blende and wurzite diluted magnetic semiconductors is presented. The model takes …

Carrier-induced ferromagnetism in the doped diluted magnetic semiconductors (In, Mn↑,
Mn↓, A) As, where A is As or Sn and Mn↑(Mn↓) denotes Mn atoms whose local magnetic …

The observation of ferromagnetism in magnetic ion doped II–VI diluted magnetic
semiconductors (DMSs) and oxides, and later in (Ga, Mn) As materials has inspired a great …

Epitaxial thin films of an oxide-diluted magnetic semiconductor, Mn-doped ZnO, were
fabricated by pulsed-laser deposition technique. Solubility of Mn into ZnO exceeds thermal …

Combinatorial laser molecular-beam epitaxy method was employed to fabricate epitaxial
ZnO thin films doped with all the 3d transition metal (TM) ions in a high throughput fashion …

We present magnetoresistance data up to 20 T and magnetisation measurements on the
mixed-valence cubic perovskite semiconductor Nd 0.5 Pb 0.5 MnO 3, which demonstrate …