Transistors based on two-dimensional materials for future integrated circuits

S Das, A Sebastian, E Pop, CJ McClellan… - Nature …, 2021 - nature.com
Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …

[HTML][HTML] Two-dimensional nanomaterials: A critical review of recent progress, properties, applications, and future directions

N Baig - Composites Part A: Applied Science and …, 2023 - Elsevier
Two-dimensional nanomaterials (2D nanomaterials) are a sophisticated advanced class of
atomically thick nanomaterials that consist of a single to few layers of atoms. The lateral size …

Uniform nucleation and epitaxy of bilayer molybdenum disulfide on sapphire

L Liu, T Li, L Ma, W Li, S Gao, W Sun, R Dong, X Zou… - Nature, 2022 - nature.com
Two-dimensional transition-metal dichalcogenides (TMDs) are of interest for beyond-silicon
electronics,. It has been suggested that bilayer TMDs, which combine good electrostatic …

Approaching the quantum limit in two-dimensional semiconductor contacts

W Li, X Gong, Z Yu, L Ma, W Sun, S Gao, Ç Köroğlu… - Nature, 2023 - nature.com
The development of next-generation electronics requires scaling of channel material
thickness down to the two-dimensional limit while maintaining ultralow contact resistance …

Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform

J Zhu, JH Park, SA Vitale, W Ge, GS Jung… - Nature …, 2023 - nature.com
Abstract Two-dimensional (2D) materials are promising candidates for future electronics due
to their excellent electrical and photonic properties. Although promising results on the wafer …

High-κ perovskite membranes as insulators for two-dimensional transistors

JK Huang, Y Wan, J Shi, J Zhang, Z Wang, W Wang… - Nature, 2022 - nature.com
The scaling of silicon metal–oxide–semiconductor field-effect transistors has followed
Moore's law for decades, but the physical thinning of silicon at sub-ten-nanometre …

2D fin field-effect transistors integrated with epitaxial high-k gate oxide

C Tan, M Yu, J Tang, X Gao, Y Yin, Y Zhang, J Wang… - Nature, 2023 - nature.com
Precise integration of two-dimensional (2D) semiconductors and high-dielectric-constant (k)
gate oxides into three-dimensional (3D) vertical-architecture arrays holds promise for …

Active pixel sensor matrix based on monolayer MoS2 phototransistor array

A Dodda, D Jayachandran, A Pannone, N Trainor… - Nature Materials, 2022 - nature.com
In-sensor processing, which can reduce the energy and hardware burden for many machine
vision applications, is currently lacking in state-of-the-art active pixel sensor (APS) …

Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistors

KH Kim, S Oh, MMA Fiagbenu, J Zheng… - Nature …, 2023 - nature.com
Three-dimensional monolithic integration of memory devices with logic transistors is a
frontier challenge in computer hardware. This integration is essential for augmenting …

2D materials in flexible electronics: recent advances and future prospectives

AK Katiyar, AT Hoang, D Xu, J Hong, BJ Kim… - Chemical …, 2023 - ACS Publications
Flexible electronics have recently gained considerable attention due to their potential to
provide new and innovative solutions to a wide range of challenges in various electronic …