The set of material parameters for quantum well structures is of immense importance
because of its usage in the development of theories, extraction of experimental data, and the …

The objective of this book is two-fold: to examine key properties of III-V compounds and to
present diverse material parameters and constants of these semiconductors for a variety of …

In this paper we review the basic theoretical aspects as well as some important experimental
results of the band anticrossing effects in highly electronegativity-mismatched …

Stresses and strains in heterostructures have dominated semiconductor research during the
last ten years. We review the theory and experimental work on stresses in III-V …

The circular polarization of cw photoluminescence as a function of applied magnetic field
has been measured at 1.8 K for excitons in a series of GaAs/Al x Ga 1− x As and GaAs/AlAs …

The band offset parameter Q,= AEJAE, for both GaAs/AlGaAs (lattice matched to GaAs), and
GaInAs/AlInAs (lattice matched to InP) was extracted from the optical interband transition …

We present a study of a series of nin InAs quantum-dot infrared photodetectors (QDIPs) with
unintentionally doped active regions. Different quantum-dot cap** layer materials (GaAs …

Electron mobilities in modulation-doped Al x Ga 1− x As/GaAs/Al x Ga 1− x As and
pseudomorphic Al x Ga 1− x As/In y Ga 1− y As/Al x Ga 1− x As quantum-well structures with …

Strained single quantum wells composed of GaAs/InGaAs/GaAs were grown by molecular
beam epitaxy and characterized at room temperature by photoreflectance and at 6 and 77 K …

In this letter, we present the first detailed theoretical study of gain in strained InGaAs/AlGaAs
quantum wells, taking into account the complex nature of the valence‐subband structure …