In recent years, III–V semiconductor nanowires have been widely investigated for infrared
photodetector applications due to their direct and suitable bandgap, unique optical and …

Health, infrastructure, and environmental monitoring as well as networking and defense
technologies are only some of the potential areas of application of micro‐/nanosystems …

Abstract A review of III–V nanowire-based infrared photodetectors is provided including
single nanowires, ensemble nanowires, and heterostructured nanowires. The performance …

The nanowire geometry provides potential advantages over planar wafer-based or thin-film
solar cells in every step of the photoconversion process. These advantages include reduced …

Semiconductor nanowires are attracting intense interest as a promising material for solar
energy conversion for the new‐generation photovoltaic (PV) technology. In particular, silicon …

Semiconductor nanowires are promising for photovoltaic applications,,,,,,,,,,, but, so far,
nanowire-based solar cells have had lower efficiencies than planar cells made from the …

Semiconductor nanowires are a class of materials recently gaining increasing interest for
solar cell applications. In this article we review the development of the field with a special …

We report on integration of GaAs nanowire-based light-emitting-diodes (NW-LEDs) on Si
substrate by selective-area metalorganic vapor phase epitaxy. The vertically aligned …

This article reviews recent developments in nanowire‐based photovoltaics (PV) with an
emphasis on III–V semiconductors including growth mechanisms, device fabrication and …

Arrays of III–V direct-bandgap semiconductor nanopillars represent promising photovoltaic
candidates due to their inherent high optical absorption coefficients and minimized reflection …