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Oxide-based resistive switching-based devices: fabrication, influence parameters and applications
In advanced computing technologies, metal oxide-based resistive switching random access
memory (RRAM) has been considered an excellent scientific research interest in the areas …
memory (RRAM) has been considered an excellent scientific research interest in the areas …
Influence of dislocations in transition metal oxides on selected physical and chemical properties
Studies on dislocations in prototypic binary and ternary oxides (here TiO2 and SrTiO3) using
modern TEM and scanning probe microscopy (SPM) techniques, combined with classical …
modern TEM and scanning probe microscopy (SPM) techniques, combined with classical …
Dislocations in SrTiO3: Easy To Reduce but Not so Fast for Oxygen Transport
The effect of dislocations on the chemical, electrical and transport properties in oxide
materials is important for electrochemical devices, such as fuel cells and resistive switches …
materials is important for electrochemical devices, such as fuel cells and resistive switches …
Do dislocations act as atomic autobahns for oxygen in the perovskite oxide SrTiO 3?
The transport properties of edge dislocations comprising a symmetrical 6°[001] tilt grain
boundary in weakly acceptor-doped SrTiO3 were investigated by means of various …
boundary in weakly acceptor-doped SrTiO3 were investigated by means of various …
Conceptual framework for dislocation-modified conductivity in oxide ceramics deconvoluting mesoscopic structure, core, and space charge exemplified for SrTiO3
The introduction of dislocations is a recently proposed strategy to tailor the functional and
especially the electrical properties of ceramics. While several works confirm a clear impact of …
especially the electrical properties of ceramics. While several works confirm a clear impact of …
Nanosized conducting filaments formed by atomic-scale defects in redox-based resistive switching memories
Redox-based resistive switching phenomena are found in many metal oxides and hold great
promise for applications in next-generation memories and neuromorphic computing …
promise for applications in next-generation memories and neuromorphic computing …
Computational Study of Oxygen Diffusion along a[100] Dislocations in the Perovskite Oxide SrTiO3
We used classical molecular-dynamics simulations to study the atomistic structure of, and
the diffusion of oxygen ions along, the periodic array of edge dislocations comprising a …
the diffusion of oxygen ions along, the periodic array of edge dislocations comprising a …
Transport properties of dislocations in SrTiO3 and other perovskites
ABO 3 perovskite-type oxides constitute some of the most fascinating materials in the solid
state sciences, displaying a wide range of useful, interesting phenomena. Electrical …
state sciences, displaying a wide range of useful, interesting phenomena. Electrical …
A Theoretical and Experimental View on the Temperature Dependence of the Electronic Conduction through a Schottky Barrier in a Resistively Switching SrTiO3 …
Metal–semiconductor Schottky interfaces are of high interest in many fields of semiconductor
physics. One type of electronic devices based on Schottky contacts are resistive switching …
physics. One type of electronic devices based on Schottky contacts are resistive switching …
Rectifying filamentary resistive switching in ion-exfoliated LiNbO3 thin films
In this letter, we report the resistive switching properties of ion-exfoliated LiNbO 3 thin films.
After annealing in Ar or in vacuum, electro-forming has been observed on the thin films, and …
After annealing in Ar or in vacuum, electro-forming has been observed on the thin films, and …