Dynamic spatial replenishment of femtosecond pulses propagating in air
We present numerical simulations of nonlinear pulse propagation in air whereby an initial
pulse is formed, absorbed by plasma generation, and subsequently replenished by power …
pulse is formed, absorbed by plasma generation, and subsequently replenished by power …
Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile
Three-layer staggered InGaN quantum wells (QWs) light-emitting diodes (LEDs) emitting at
520–525 nm were grown by metal-organic chemical vapor deposition by employing graded …
520–525 nm were grown by metal-organic chemical vapor deposition by employing graded …
Optical gain and laser characteristics of InGaN quantum wells on ternary InGaN substrates
The optical gain and threshold characteristics of InGaN quantum wells (QWs) on ternary
InGaN substrate emitting in green and yellow spectral regimes are analyzed. By employing …
InGaN substrate emitting in green and yellow spectral regimes are analyzed. By employing …
Far‐field and beam characteristics of vertical‐cavity surface‐emitting lasers
YG Zhao, YS Zhang, XL Huang, LT Zhang… - Applied physics …, 1996 - pubs.aip.org
We have determined the far-field patterns and beam parameters of vertical-cavity surface-
emitting lasers (VCSELs) with different structures. The results show that the window …
emitting lasers (VCSELs) with different structures. The results show that the window …
InGaN-ZnSnN2 quantum wells for high efficiency light emitters beyond green
InGaN-ZnSnN2 Quantum Wells for High Efficiency Light Emitters Beyond Green Page 1
STh3I.2.pdf CLEO 2018 © OSA 2018 InGaN-ZnSnN2 Quantum Wells for High Efficiency Light …
STh3I.2.pdf CLEO 2018 © OSA 2018 InGaN-ZnSnN2 Quantum Wells for High Efficiency Light …
Effect of nonlinearity in the pass-through optics on femtosecond laser filament in air
AA Dergachev, AA Ionin, VP Kandidov… - Laser Physics …, 2014 - iopscience.iop.org
The influence of pass-through optics on femtosecond laser pulse filamentation in ambient air
is analyzed for the first time both experimentally and numerically. Propagation of a high …
is analyzed for the first time both experimentally and numerically. Propagation of a high …
Gain and spontaneous emission characteristics of AlInN quantum well for deep ultraviolet emitters
Gain and spontaneous emission characteristics of AlInN quantum well for deep ultraviolet
emitters Page 1 Gain and Spontaneous Emission Characteristics of AlInN Quantum Well for …
emitters Page 1 Gain and Spontaneous Emission Characteristics of AlInN Quantum Well for …
Effect of negative gain suppression on the stability of laser diodes
The stability of homogeneously pumped single-section laser diodes is analyzed theoretically
and it is found that under certain bias conditions negative gain suppression factor laser …
and it is found that under certain bias conditions negative gain suppression factor laser …
Analysis of position and thickness dependence of ZnGeN2 layer in type-II InGaN-ZnGeN2 quantum wells light-emitting diodes
J Grgat, L Han, H Zhao - CLEO: Science and Innovations, 2017 - opg.optica.org
Analysis of Position and Thickness Dependence of ZnGeN2 Layer in Type-II InGaN-ZnGeN2
Quantum Wells Light-Emitting Diodes Page 1 STh3I.5.pdf CLEO 2017 © OSA 2017 Analysis of …
Quantum Wells Light-Emitting Diodes Page 1 STh3I.5.pdf CLEO 2017 © OSA 2017 Analysis of …
Wide-band Tunable Laser via Integration of High Precision Wavelength Spacing DFB Lasers
Wide-band Tunable Laser via Integration of High Precision Wavelength Spacing DFB Lasers
Page 1 Wide-band Tunable Laser via Integration of High Precision Wavelength Spacing DFB …
Page 1 Wide-band Tunable Laser via Integration of High Precision Wavelength Spacing DFB …